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Patriot Memory (PDP Systems) 1600 CL10 Series 8GB
Samsung M471A1K43CB1-CTD 8GB

Patriot Memory (PDP Systems) 1600 CL10 Series 8GB vs Samsung M471A1K43CB1-CTD 8GB

总分
star star star star star
Patriot Memory (PDP Systems) 1600 CL10 Series 8GB

Patriot Memory (PDP Systems) 1600 CL10 Series 8GB

总分
star star star star star
Samsung M471A1K43CB1-CTD 8GB

Samsung M471A1K43CB1-CTD 8GB

差异 规格 评论

差异

Patriot Memory (PDP Systems) 1600 CL10 Series 8GB 需要考虑的原因
Patriot Memory (PDP Systems) 1600 CL10 Series 8GB
报告一个错误
Samsung M471A1K43CB1-CTD 8GB 需要考虑的原因
Samsung M471A1K43CB1-CTD 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    33 left arrow 40
    左右 -21% 更低的延时
  • 更快的读取速度，GB/s
    15.8 left arrow 15.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.9 left arrow 9.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Patriot Memory (PDP Systems) 1600 CL10 Series 8GB
Samsung M471A1K43CB1-CTD 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    40 left arrow 33
  • 读取速度，GB/s
    15.1 left arrow 15.8
  • 写入速度，GB/s
    9.3 left arrow 11.9
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2532 left arrow 2824

Patriot Memory (PDP Systems) 1600 CL10 Series 8GB RAM的比较

G Skill Intl F4-2800C15-16GRKD 16GB
Micron Technology 16ATF2G64HZ-2G3B1 16GB

Samsung M471A1K43CB1-CTD 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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内存RAM
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