Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology BL32G32C16S4B.M16FB1 32GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Crucial Technology BL32G32C16S4B.M16FB1 32GB

总分

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分

Crucial Technology BL32G32C16S4B.M16FB1 32GB

Crucial Technology BL32G32C16S4B.M16FB1 32GB

差异规格评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

报告一个错误

低于PassMark测试中的延时，ns

35 36

左右 3% 更低的延时

Crucial Technology BL32G32C16S4B.M16FB1 32GB

需要考虑的原因
Crucial Technology BL32G32C16S4B.M16FB1 32GB

报告一个错误

更快的读取速度，GB/s

17.1 13.7

测试中的平均数值
更快的写入速度，GB/s

14.9 9.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology BL32G32C16S4B.M16FB1 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 36
读取速度，GB/s

13.7 17.1
写入速度，GB/s

9.6 14.9
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2312 3449

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Heoriady M471A1K43BB1-CRC 16GB

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A-DATA Technology VDQVE1B16 2GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Shenzhen Xingmem Technology Corp KRE-D4U2400M/8G 8GB

Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

SK Hynix HMA851U6DJR6N-XN 4GB

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Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

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Corsair CMU16GX4M2C3200C16 8GB

Samsung M378B5173EB0-CK0 4GB

Samsung M378B5173EB0-CK0 4GB

Corsair CMK64GX4M8A2666C16 8GB

Corsair CMK64GX4M8A2666C16 8GB