Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology BLS8G4D32AESEK.M8FE1 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Crucial Technology BLS8G4D32AESEK.M8FE1 8GB

总分

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分

Crucial Technology BLS8G4D32AESEK.M8FE1 8GB

Crucial Technology BLS8G4D32AESEK.M8FE1 8GB

差异规格评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

报告一个错误

低于PassMark测试中的延时，ns

35 44

左右 20% 更低的延时

Crucial Technology BLS8G4D32AESEK.M8FE1 8GB

需要考虑的原因
Crucial Technology BLS8G4D32AESEK.M8FE1 8GB

报告一个错误

更快的读取速度，GB/s

17.3 13.7

测试中的平均数值
更快的写入速度，GB/s

10.8 9.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology BLS8G4D32AESEK.M8FE1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 44
读取速度，GB/s

13.7 17.3
写入速度，GB/s

9.6 10.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2312 2523

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Crucial Technology CT25664AA800.M16FM 2GB

Crucial Technology CT25664AA800.M16FM 2GB

G Skill Intl F4-3000C15-8GVKB 8GB

G Skill Intl F4-3000C15-8GVKB 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology BLS8G4D32AESEK.M8FE1 8GB

Crucial Technology BLS8G4D32AESEK.M8FE1 8GB

Qimonda 64T128020EDL2.5C2 1GB

Qimonda 64T128020EDL2.5C2 1GB

Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N

Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

Samsung M47472K43DB1-CTD 16GB

Samsung M47472K43DB1-CTD 16GB

TwinMOS 9DNPBNZB-TATP 4GB

TwinMOS 9DNPBNZB-TATP 4GB

Mushkin MR[A/B]4U320GJJM8G 8GB

Mushkin MR[A/B]4U320GJJM8G 8GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

G Skill Intl F4-3200C16-8GVGB 8GB

G Skill Intl F4-3200C16-8GVGB 8GB

Smart Modular SH564128FH8NZQNSCG 4GB

Smart Modular SH564128FH8NZQNSCG 4GB

Crucial Technology CT4G4DFS8266.M8FG 4GB

Crucial Technology CT4G4DFS8266.M8FG 4GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

G Skill Intl F4-3000C15-4GVSB 4GB

G Skill Intl F4-3000C15-4GVSB 4GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Kingston XG9XKG-MIE 16GB

Kingston XG9XKG-MIE 16GB

Samsung M378B1G73EB0-CK0 8GB

Samsung M378B1G73EB0-CK0 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-UH 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N

Apacer Technology 78.C1GET.9K10C 8GB

Apacer Technology 78.C1GET.9K10C 8GB

Kingston KF3000C16D4/32GX 32GB

Kingston KF3000C16D4/32GX 32GB

Transcend Information JM2666HLB-8G 8GB

Transcend Information JM2666HLB-8G 8GB

G Skill Intl F4-2133C15-16GFXR 16GB

G Skill Intl F4-2133C15-16GFXR 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

G Skill Intl F4-3000C16-16GTRS 16GB

G Skill Intl F4-3000C16-16GTRS 16GB

A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

Kingmax Semiconductor GSJF62F-DA---------- 4GB

Kingmax Semiconductor GSJF62F-DA---------- 4GB