Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Crucial Technology CT8G4DFS8266.C8FJ 8GB

总分

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分

Crucial Technology CT8G4DFS8266.C8FJ 8GB

Crucial Technology CT8G4DFS8266.C8FJ 8GB

差异规格评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

报告一个错误

低于PassMark测试中的延时，ns

35 38

左右 8% 更低的延时

Crucial Technology CT8G4DFS8266.C8FJ 8GB

需要考虑的原因
Crucial Technology CT8G4DFS8266.C8FJ 8GB

报告一个错误

更快的读取速度，GB/s

16.3 13.7

测试中的平均数值
更快的写入速度，GB/s

10.7 9.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Crucial Technology CT8G4DFS8266.C8FJ 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 38
读取速度，GB/s

13.7 16.3
写入速度，GB/s

9.6 10.7
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2312 2942

RAM Latency Calculator

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RAM 2

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Elpida EBJ40UG8EFU0-GN-F 4GB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Micron Technology 18ASF1G72PZ-2G3B1 8GB

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A-DATA Technology DQKD1A08 1GB

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Corsair CMK32GX4M2B3466C16 16GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

Kingston 9905702-019.A00G 8GB

Kingston 9905702-019.A00G 8GB

Kingston 9905403-444.A00LF 4GB

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Crucial Technology BLS4G4D240FSB.M8FBD 4GB

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Kingston 9905403-444.A00LF 4GB

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Micron Technology 16ATF2G64HZ-2G1A1 16GB

Micron Technology 16ATF2G64HZ-2G1A1 16GB

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Samsung M378A5143TB2-CTD 4GB

Samsung M378A5143TB2-CTD 4GB