Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs G Skill Intl F4-2933C16-16GTZRX 16GB

总分

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分

G Skill Intl F4-2933C16-16GTZRX 16GB

G Skill Intl F4-2933C16-16GTZRX 16GB

差异规格评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

报告一个错误

G Skill Intl F4-2933C16-16GTZRX 16GB

需要考虑的原因
G Skill Intl F4-2933C16-16GTZRX 16GB

报告一个错误

低于PassMark测试中的延时，ns

22 35

左右 -59% 更低的延时
更快的读取速度，GB/s

16.7 13.7

测试中的平均数值
更快的写入速度，GB/s

13.4 9.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

G Skill Intl F4-2933C16-16GTZRX 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 22
读取速度，GB/s

13.7 16.7
写入速度，GB/s

9.6 13.4
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2312 3188

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Smart Modular SF4641G8CK8IWGKSEG 8GB

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Kingston 9905471-002.A00LF 2GB

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Crucial Technology CT4G4DFS8266.M8FG 4GB

Crucial Technology CT4G4DFS8266.M8FG 4GB

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Samsung M378A2K43BB1-CRC 16GB

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Kingmax Semiconductor FLFE85F-C8KL9 2GB

Samsung M471A1K43CB1-CRCR 8GB

Samsung M471A1K43CB1-CRCR 8GB