Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs G Skill Intl F4-3200C15-16GVR 16GB

总分

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分

G Skill Intl F4-3200C15-16GVR 16GB

G Skill Intl F4-3200C15-16GVR 16GB

差异规格评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

报告一个错误

G Skill Intl F4-3200C15-16GVR 16GB

需要考虑的原因
G Skill Intl F4-3200C15-16GVR 16GB

报告一个错误

低于PassMark测试中的延时，ns

27 35

左右 -30% 更低的延时
更快的读取速度，GB/s

18.7 13.7

测试中的平均数值
更快的写入速度，GB/s

12.9 9.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

G Skill Intl F4-3200C15-16GVR 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 27
读取速度，GB/s

13.7 18.7
写入速度，GB/s

9.6 12.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2312 3327

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F3-1333C9-4GIS 4GB

G Skill Intl F3-1333C9-4GIS 4GB

Samsung M471A2K43EB1-CWE 16GB

Samsung M471A2K43EB1-CWE 16GB

Kingston ACR16D3LFS1KBG/2G 2GB

Kingston ACR16D3LFS1KBG/2G 2GB

Crucial Technology BLS8G4D240FSA.16FARG 8GB

Crucial Technology BLS8G4D240FSA.16FARG 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451U7MFR8N

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

G Skill Intl F4-3200C15-16GVR 16GB

G Skill Intl F4-3200C15-16GVR 16GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

G Skill Intl F4-3333C16-16GTZKW 16GB

G Skill Intl F4-3333C16-16GTZKW 16GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

Micron Technology 4ATF51264AZ-2G3B1 4GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Ramos Technology EWB8GB681CA3-16IC 8GB

Team Group Inc. TEAMGROUP-ED4-2400 16GB

Team Group Inc. TEAMGROUP-ED4-2400 16GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8

Kingmax Semiconductor GSAH22F-18---------- 16GB

Kingmax Semiconductor GSAH22F-18---------- 16GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

Crucial Technology CT8G4DFRA32A.M8FR 8GB

Crucial Technology CT8G4DFRA32A.M8FR 8GB

Samsung M471A5244CB0-CWE 4GB

Samsung M471A5244CB0-CWE 4GB

Kingston K000MD44U 4GB

Kingston K000MD44U 4GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A-PB 8GB

Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A

Kingston 9905630-007.A00G 8GB

Kingston 9905630-007.A00G 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Ramaxel Technology RMUA5110MB78HAF2400 8GB

Ramaxel Technology RMUA5110MB78HAF2400 8GB

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

Kingston 99U5723-002.A00G 8GB

Kingston 99U5723-002.A00G 8GB

Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

G Skill Intl F4-3200C16-8GTZB 8GB

G Skill Intl F4-3200C16-8GTZB 8GB