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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3866C18-8GTZSW 8GB
比较
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs G Skill Intl F4-3866C18-8GTZSW 8GB
总分
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
总分
G Skill Intl F4-3866C18-8GTZSW 8GB
差异
规格
评论
差异
需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
报告一个错误
需要考虑的原因
G Skill Intl F4-3866C18-8GTZSW 8GB
报告一个错误
低于PassMark测试中的延时,ns
18
35
左右 -94% 更低的延时
更快的读取速度,GB/s
20.9
13.7
测试中的平均数值
更快的写入速度,GB/s
17.0
9.6
测试中的平均数值
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3866C18-8GTZSW 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
35
18
读取速度,GB/s
13.7
20.9
写入速度,GB/s
9.6
17.0
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2312
3668
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM的比较
SK Hynix HMT351R7EFR8C-RD 4GB
Kingston KHX31600C10F/8G 8GB
G Skill Intl F4-3866C18-8GTZSW 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M3 93T5750CZA-CE6 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M393B1G70BH0-YK0 8GB
G Skill Intl F4-2400C15-4GRR 4GB
SK Hynix HMT325U6CFR8C-PB 2GB
Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
Kingston 9905734-102.A00G 32GB
Samsung M3 93T5750CZA-CE6 2GB
Golden Empire CL16-18-18 D4-2666 8GB
Smart Modular SH564128FH8NZQNSCG 4GB
Wilk Elektronik S.A. GR2133S464L15S/8G 8GB
Hexon Technology Pte Ltd HEXON 1GB
Crucial Technology CT16G4SFD8266.C16FD1 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
G Skill Intl F4-3866C18-8GTZSW 8GB
Kingmax Semiconductor KLDD48F-B8KU5 1GB
Kingston 99U5700-010.A00G 8GB
Kingston 99U5584-001.A00LF 4GB
Cortus SAS 8ATF51264AZ-2G1A1 4GB
Samsung M378B5673EH1-CF8 2GB
Smart Modular SF4721G8CKHH6DFSDS 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT8G4DFS824A.C8FAD1 8GB
A-DATA Technology AD4U240038G17-BHYA 8GB
Corsair CMK32GX5M2A4800C40 16GB
Samsung M391B5673FH0-CH9 2GB
G Skill Intl F4-3200C16-16GFX 16GB
Samsung M393B1K70CH0-CH9 8GB
SK Hynix V-GeN D4H8GL26A8TX5 8GB
报告一个错误
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Bug description
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