RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
zh
Русский Русский English English Español Español Português Português Deutsch Deutsch Français Français Italiano Italiano Polski Polski 中文 中文 日本語 日本語
A-DATA Technology ADOVE1A0834E 1GB
Micron Technology 16ATF2G64HZ-2G3E1 16GB

A-DATA Technology ADOVE1A0834E 1GB vs Micron Technology 16ATF2G64HZ-2G3E1 16GB

总分
star star star star star
A-DATA Technology ADOVE1A0834E 1GB

A-DATA Technology ADOVE1A0834E 1GB

总分
star star star star star
Micron Technology 16ATF2G64HZ-2G3E1 16GB

Micron Technology 16ATF2G64HZ-2G3E1 16GB

差异 规格 评论

差异

A-DATA Technology ADOVE1A0834E 1GB 需要考虑的原因
A-DATA Technology ADOVE1A0834E 1GB
报告一个错误
Micron Technology 16ATF2G64HZ-2G3E1 16GB 需要考虑的原因
Micron Technology 16ATF2G64HZ-2G3E1 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    37 left arrow 94
    左右 -154% 更低的延时
  • 更快的读取速度，GB/s
    14.2 left arrow 1
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.7 left arrow 1,165.4
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
A-DATA Technology ADOVE1A0834E 1GB
Micron Technology 16ATF2G64HZ-2G3E1 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    94 left arrow 37
  • 读取速度，GB/s
    1,882.0 left arrow 14.2
  • 写入速度，GB/s
    1,165.4 left arrow 10.7
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    305 left arrow 2591

A-DATA Technology ADOVE1A0834E 1GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HYMP125S64CP8-Y5 2GB
G Skill Intl F4-3300C16-8GTZSW 8GB

Micron Technology 16ATF2G64HZ-2G3E1 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
Micron Technology 16ATF2G64HZ-2G3E1 16GB
Micron Technology 16ATF2G64HZ-2G3E1 16GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Crucial Technology CT16G4DFD832A.C16FP 16GB
Crucial Technology CT16G4DFD832A.C16FP 16GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
Crucial Technology BL16G26C16U4R.16FE 16GB
Crucial Technology BL16G26C16U4R.16FE 16GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
Essencore Limited KD4AGSA8A-32N2200 16GB
Essencore Limited KD4AGSA8A-32N2200 16GB
内存RAM
Elpida EBJ17RG4EFWA-DJ-F 16GB
Elpida EBJ17RG4EFWA-DJ-F 16GB
Crucial Technology CT16G4DFD8213.C16FH1 16GB
Crucial Technology CT16G4DFD8213.C16FH1 16GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Micron Technology TEAMGROUP-UD4-2133 16GB
Micron Technology TEAMGROUP-UD4-2133 16GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Corsair CM4X16GE2400Z16K4 16GB
Corsair CM4X16GE2400Z16K4 16GB
内存RAM
Corsair CMSO4GX3M1A1333C9 4GB
Corsair CMSO4GX3M1A1333C9 4GB
SK Hynix HMT351S6BFR8C-H9 4GB
SK Hynix HMT351S6BFR8C-H9 4GB
内存RAM
Samsung M378B5673FH0-CH9 2GB
Samsung M378B5673FH0-CH9 2GB
Kingston 9905712-048.A00G 16GB
Kingston 9905712-048.A00G 16GB
内存RAM
AMD R534G1601U1S-UO 4GB
AMD R534G1601U1S-UO 4GB
A-DATA Technology AM1P26KCST2-BABS 16GB
A-DATA Technology AM1P26KCST2-BABS 16GB
内存RAM
Samsung M471B1G73EB0-YK0 8GB
Samsung M471B1G73EB0-YK0 8GB
Ramaxel Technology RMSA3260MH78HAF-2666 8GB
Ramaxel Technology RMSA3260MH78HAF-2666 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB
Patriot Memory (PDP Systems) 3600 C20 Series 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Crucial Technology BL8G32C16U4BL.M8FE1 8GB
Crucial Technology BL8G32C16U4BL.M8FE1 8GB
内存RAM
Samsung M378A1K43EB2-CWE 8GB
Samsung M378A1K43EB2-CWE 8GB
G Skill Intl F4-3000C16-8GTRS 8GB
G Skill Intl F4-3000C16-8GTRS 8GB
内存RAM