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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
比较
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
总分
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
总分
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
差异
规格
评论
差异
需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
报告一个错误
更快的读取速度,GB/s
13.7
11.1
测试中的平均数值
更快的写入速度,GB/s
9.6
9.5
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
报告一个错误
低于PassMark测试中的延时,ns
34
35
左右 -3% 更低的延时
更高的内存带宽,mbps
17000
12800
左右 1.33 更高的带宽
规格
完整的技术规格清单
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
35
34
读取速度,GB/s
13.7
11.1
写入速度,GB/s
9.6
9.5
内存带宽,mbps
12800
17000
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9
PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度
9-9-9-24 / 1600 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
2312
2319
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM的比较
SK Hynix HMT351R7EFR8C-RD 4GB
Kingston KHX31600C10F/8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB RAM的比较
Samsung M378A1K43BB1-CPB 8GB
Hexon Technology Pte Ltd HEXON 1GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M386B4G70DM0-CMA4 32GB
G Skill Intl F4-3600C18-8GTZN 8GB
Kingston KHX1600C9D3/4G 4GB
Crucial Technology CT8G4SFS832A.C8FE 8GB
Kingston 2GB-DDR2 800Mhz 2GB
Crucial Technology CT16G4DFD824A.C16FAD 16GB
Corsair CMSX4GX3M1A1600C9 4GB
Micron Technology 36ASF4G72PZ-2G3A1 32GB
G Skill Intl F5-6400J3239G16G 16GB
Corsair CMK16GX4M2C3000C16 8GB
Kingston 9905471-006.A01LF 4GB
G Skill Intl F4-3000C15-4GTZ 4GB
A-DATA Technology AM2L16BC4R1-B0CS 4GB
EVGA 16G-D4-2800-MR 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
V-GEN D4H4GL30A8TS5 4GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6AFR8A
Kingston 9905663-005.A00G 16GB
Gold Key Technology Co Ltd NMUD416E86-3200D 16GB
KingSpec KingSpec 16GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Crucial Technology CT4G4DFS824A.C8FADP 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Micron Technology 16ATF2G64HZ-2G3E1 16GB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3600C19-16GSXKB 16GB
Kingston KHX1866C10D3/4G 4GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO10240
报告一个错误
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Bug description
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