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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston 9905663-012.A00G 16GB
比较
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Kingston 9905663-012.A00G 16GB
总分
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
总分
Kingston 9905663-012.A00G 16GB
差异
规格
评论
差异
需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
报告一个错误
更快的写入速度,GB/s
9.6
9.1
测试中的平均数值
需要考虑的原因
Kingston 9905663-012.A00G 16GB
报告一个错误
低于PassMark测试中的延时,ns
24
35
左右 -46% 更低的延时
更快的读取速度,GB/s
15
13.7
测试中的平均数值
更高的内存带宽,mbps
19200
12800
左右 1.5 更高的带宽
规格
完整的技术规格清单
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston 9905663-012.A00G 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
35
24
读取速度,GB/s
13.7
15.0
写入速度,GB/s
9.6
9.1
内存带宽,mbps
12800
19200
Other
描述
PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
9-9-9-24 / 1600 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
2312
2530
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM的比较
SK Hynix HMT351R7EFR8C-RD 4GB
Kingston KHX31600C10F/8G 8GB
Kingston 9905663-012.A00G 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Gloway International (HK) STK4U2400D17041C 4GB
Corsair CM2X1024-6400C4 1GB
Crucial Technology CT16G4SFD8266.C16FJ 16GB
Kingston ACR256X64D3S1333C9 2GB
Samsung M378A2K43CB1-CRC 16GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston 9905663-012.A00G 16GB
Samsung 1600 CL10 Series 8GB
G Skill Intl F4-4266C19-4GTZ 4GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology CT8G4SFS8266.C8FN 8GB
A-DATA Technology DDR3 1600 4GB
G Skill Intl F4-3600C19-8GSXWB 8GB
Kingston ACR256X64D3S1333C9 2GB
Corsair CMU16GX4M2D3000C16 8GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Kingston KF3200C20S4/16GX 16GB
G Skill Intl F3-2133C9-4GAB 4GB
Micron Technology 16ATF2G64AZ-2G3E1 16GB
Samsung DDR3 8GB 1600MHz 8GB
Micron Technology M471A1K43BB1-CRC 8GB
Samsung M393B2G70BH0-YK0 16GB
Apacer Technology 78.CAGP7.DFW0C 8GB
Hexon Technology Pte Ltd HEXON 1GB
Thermaltake Technology Co Ltd R022D408GX2-3600C18A 8GB
Samsung M378B5673EH1-CF8 2GB
SK Hynix HMA451U6MFR8N-TF 4GB
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