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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston ACR26D4S9S1KA-4 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Kingston ACR26D4S9S1KA-4 4GB

总分
star star star star star
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分
star star star star star
Kingston ACR26D4S9S1KA-4 4GB

Kingston ACR26D4S9S1KA-4 4GB

差异 规格 评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB 需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 42
    左右 17% 更低的延时
Kingston ACR26D4S9S1KA-4 4GB 需要考虑的原因
Kingston ACR26D4S9S1KA-4 4GB
报告一个错误
  • 更快的读取速度，GB/s
    14.3 left arrow 13.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.0 left arrow 9.6
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston ACR26D4S9S1KA-4 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    35 left arrow 42
  • 读取速度，GB/s
    13.7 left arrow 14.3
  • 写入速度，GB/s
    9.6 left arrow 11.0
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2312 left arrow 2074

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB RAM的比较

SK Hynix HMT351R7EFR8C-RD 4GB
Kingston KHX31600C10F/8G 8GB

Kingston ACR26D4S9S1KA-4 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Kingston ACR26D4S9S1KA-4 4GB
Kingston ACR26D4S9S1KA-4 4GB
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Team Group Inc. TEAMGROUP-UD4-4500 8GB
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A-DATA Technology VDQVE1B16 2GB
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SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
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G Skill Intl F4-4500C19-8GTZKKE 8GB
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Nanya Technology NT2GT64U8HD0BN-AD 2GB
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SK Hynix HMA82GS7AFR8N-UH 16GB
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Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
Micron Technology 16ATF2G64HZ-3G2J1 16GB
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Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
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Apacer Technology GD2.1527CS.001 8GB
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Samsung M393B5170FH0-CH9 4GB
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Hynix Semiconductor (Hyundai Electronics) HMA82GS6MFR8N
内存RAM
Kingston KVT8FP-HYC 4GB
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Crucial Technology CT8G4SFS8213.M8FA 8GB
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G Skill Intl F3-10600CL9-2GBNT 2GB
G Skill Intl F3-10600CL9-2GBNT 2GB
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G Skill Intl F4-3000C16-8GTRG 8GB
内存RAM
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
Wilk Elektronik S.A. GR1333D364L9/4G 4GB
G Skill Intl F4-2933C16-8GFX 8GB
G Skill Intl F4-2933C16-8GFX 8GB
内存RAM
Samsung M471A1K43DB1-CWE 8GB
Samsung M471A1K43DB1-CWE 8GB
Corsair CMSX16GX4M1A2666C18 16GB
Corsair CMSX16GX4M1A2666C18 16GB
内存RAM
Samsung M471B5773DH0-CH9 2GB
Samsung M471B5773DH0-CH9 2GB
Kingston XG9XKG-MIE 16GB
Kingston XG9XKG-MIE 16GB
内存RAM