Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 3600 C20 Series 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Patriot Memory (PDP Systems) 3600 C20 Series 8GB

总分

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分

Patriot Memory (PDP Systems) 3600 C20 Series 8GB

Patriot Memory (PDP Systems) 3600 C20 Series 8GB

差异规格评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

报告一个错误

Patriot Memory (PDP Systems) 3600 C20 Series 8GB

需要考虑的原因
Patriot Memory (PDP Systems) 3600 C20 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 35

左右 -17% 更低的延时
更快的读取速度，GB/s

20.1 13.7

测试中的平均数值
更快的写入速度，GB/s

16.3 9.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 3600 C20 Series 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 30
读取速度，GB/s

13.7 20.1
写入速度，GB/s

9.6 16.3
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2312 3796

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Crucial Technology CT8G4DFRA266.M4FE 8GB

Crucial Technology CT8G4DFRA266.M4FE 8GB

Samsung M4 70T2864QZ3-CF7 1GB

Samsung M4 70T2864QZ3-CF7 1GB

Micron Technology 9ASF1G72PZ-2G3A1 8GB

Micron Technology 9ASF1G72PZ-2G3A1 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 3600 C20 Series 8GB

Patriot Memory (PDP Systems) 3600 C20 Series 8GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Wilk Elektronik S.A. GR1333D364L9/4G 4GB

Patriot Memory (PDP Systems) 2133 C14 Series 8GB

Patriot Memory (PDP Systems) 2133 C14 Series 8GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Kingston 9905598-026.A00G 16GB

Kingston 9905598-026.A00G 16GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Nanya Technology NT2GT64U8HD0BY-AD 2GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3000 8GB

Apacer Technology 78.01GA0.9K5 1GB

Apacer Technology 78.01GA0.9K5 1GB

Chun Well Technology Holding Limited MD4U1632160DCW 16GB

Chun Well Technology Holding Limited MD4U1632160DCW 16G

Kingston KHX1600C9D3/4G 4GB

Kingston KHX1600C9D3/4G 4GB

Mushkin MR[ABC]4U360JNNM8G 8GB

Mushkin MR[ABC]4U360JNNM8G 8GB

Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

G Skill Intl F4-3600C16-8GTZKK 8GB

G Skill Intl F4-3600C16-8GTZKK 8GB

Kingston K531R8-MIN 4GB

Kingston K531R8-MIN 4GB

Kingston HP32D4U8S8ME-8X 8GB

Kingston HP32D4U8S8ME-8X 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

Micron Technology 4ATS1G64HZ-2G3B1 8GB

Micron Technology 4ATS1G64HZ-2G3B1 8GB

Samsung M378A5244CB0-CTD 4GB

Samsung M378A5244CB0-CTD 4GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

Lexar Co Limited LD4AU016G-H3200GST 16GB

SK Hynix HMT351U6AFR8C-H9 4GB

SK Hynix HMT351U6AFR8C-H9 4GB

Samsung M392A4K40BM0-CRC 32GB

Samsung M392A4K40BM0-CRC 32GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Crucial Technology BL16G32C16S4B.M16FE 16GB

Crucial Technology BL16G32C16S4B.M16FE 16GB