Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Samsung M474A1G43EB1-CRC 8GB

总分

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分

Samsung M474A1G43EB1-CRC 8GB

Samsung M474A1G43EB1-CRC 8GB

差异规格评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

报告一个错误

Samsung M474A1G43EB1-CRC 8GB

需要考虑的原因
Samsung M474A1G43EB1-CRC 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 35

左右 -59% 更低的延时
更快的读取速度，GB/s

17.2 13.7

测试中的平均数值
更快的写入速度，GB/s

13.8 9.6

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Samsung M474A1G43EB1-CRC 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 22
读取速度，GB/s

13.7 17.2
写入速度，GB/s

9.6 13.8
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2312 2989

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 9ASF51272PZ-2G1B1 4GB

Micron Technology 9ASF51272PZ-2G1B1 4GB

G Skill Intl F3-10600CL9-2GBNT 2GB

G Skill Intl F3-10600CL9-2GBNT 2GB

Kingston 9905599-025.A00G 8GB

Kingston 9905599-025.A00G 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

SK Hynix HMA451U6AFR8N-TF 4GB

SK Hynix HMA451U6AFR8N-TF 4GB

Kingston 9965525-018.A00LF 4GB

Kingston 9965525-018.A00LF 4GB

Samsung M378A2G43MX3-CTD 16GB

Samsung M378A2G43MX3-CTD 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M471A4G43BB1-CWE 32GB

Samsung M471A4G43BB1-CWE 32GB

Corsair CMD8GX3M2A2933C12 4GB

Corsair CMD8GX3M2A2933C12 4GB

Transcend Information TS512MLH64V1H 4GB

Transcend Information TS512MLH64V1H 4GB

Samsung M471B5273DH0-CK0 4GB

Samsung M471B5273DH0-CK0 4GB

Crucial Technology BL8G26C16U4B.8FD 8GB

Crucial Technology BL8G26C16U4B.8FD 8GB

Kingston 99U5584-007.A00LF 4GB

Kingston 99U5584-007.A00LF 4GB

Apacer Technology 78.D2GF2.AU30B 16GB

Apacer Technology 78.D2GF2.AU30B 16GB

Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

Crucial Technology CT8G4DFRA266.M4FE 8GB

Crucial Technology CT8G4DFRA266.M4FE 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Kingston 99U5701-003.A00G 16GB

Kingston 99U5701-003.A00G 16GB

Corsair CMK16GX4M2K4266C16 8GB

Corsair CMK16GX4M2K4266C16 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Kingston 9965596-031.B00G 8GB

Kingston 9965596-031.B00G 8GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingston 9965516-477.A00G 16GB

Kingston 9965516-477.A00G 16GB