Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB vs Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB

总分

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

总分

Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB

Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB

差异规格评论

差异

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

需要考虑的原因
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

报告一个错误

Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB

需要考虑的原因
Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB

报告一个错误

低于PassMark测试中的延时，ns

25 35

左右 -40% 更低的延时
更快的读取速度，GB/s

20.2 13.7

测试中的平均数值
更快的写入速度，GB/s

18.1 9.6

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 25
读取速度，GB/s

13.7 20.2
写入速度，GB/s

9.6 18.1
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2312 4046

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB

Thermaltake Technology Co Ltd R017D408GX2-4000C19A 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

SK Hynix HYMP31GF72CMP4D5Y5 8GB

G Skill Intl F4-3600C16-8GTRS 8GB

G Skill Intl F4-3600C16-8GTRS 8GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB

Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N

Kingston 99U5474-010.A00LF 2GB

Kingston 99U5474-010.A00LF 2GB

G Skill Intl F4-3600C18-16GVK 16GB

G Skill Intl F4-3600C18-16GVK 16GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

G Skill Intl F4-3200C16-4GVRB 4GB

G Skill Intl F4-3200C16-4GVRB 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Corsair CMK16GX4M2D3600C16 8GB

Corsair CMK16GX4M2D3600C16 8GB

G Skill Intl F4-4000C14-16GTZR 16GB

G Skill Intl F4-4000C14-16GTZR 16GB

A-DATA Technology AD4U240038G17-BHYA 8GB

A-DATA Technology AD4U240038G17-BHYA 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

G Skill Intl F4-2400C14-16GRK 16GB

G Skill Intl F4-2400C14-16GRK 16GB

Kingston 9905403-038.A00LF 4GB

Kingston 9905403-038.A00LF 4GB

Crucial Technology BLS16G4S240FSD.16FBR 16GB

Crucial Technology BLS16G4S240FSD.16FBR 16GB

ASint Technology SSA302G08-EGN1C 4GB

ASint Technology SSA302G08-EGN1C 4GB

G Skill Intl F4-2933C14-16GFX 16GB

G Skill Intl F4-2933C14-16GFX 16GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology CT16G4SFD824A.C16FBD 16GB

Crucial Technology CT16G4SFD824A.C16FBD 16GB

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Virtium Technology Inc. VL33A1G63F-N6S 8GB

Virtium Technology Inc. VL33A1G63F-N6S 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

G Skill Intl F4-2666C19-8GSXK 8GB

G Skill Intl F4-2666C19-8GSXK 8GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905700-011.A00G 8GB

Kingston 9905700-011.A00G 8GB