Patriot Memory (PDP Systems) PSD22G6672 2GB vs Ramaxel Technology RMSA3310ME96HAF-3200 8GB

总分

Patriot Memory (PDP Systems) PSD22G6672 2GB

Patriot Memory (PDP Systems) PSD22G6672 2GB

总分

Ramaxel Technology RMSA3310ME96HAF-3200 8GB

Ramaxel Technology RMSA3310ME96HAF-3200 8GB

差异规格评论

差异

Patriot Memory (PDP Systems) PSD22G6672 2GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD22G6672 2GB

报告一个错误

更快的读取速度，GB/s

3 15.5

测试中的平均数值

Ramaxel Technology RMSA3310ME96HAF-3200 8GB

需要考虑的原因
Ramaxel Technology RMSA3310ME96HAF-3200 8GB

报告一个错误

低于PassMark测试中的延时，ns

56 62

左右 -11% 更低的延时
更快的写入速度，GB/s

8.2 1,910.9

测试中的平均数值
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) PSD22G6672 2GB

Ramaxel Technology RMSA3310ME96HAF-3200 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

62 56
读取速度，GB/s

3,611.3 15.5
写入速度，GB/s

1,910.9 8.2
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 28
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

627 1964

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Corsair CMW16GX4M2C3000C15 8GB

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Samsung M391B5673EH1-CH9 2GB

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Super Talent F26UB16GH 16GB

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SK Hynix HMA451U6MFR8N-TF 4GB

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G Skill Intl F5-6400J3239G16G 16GB

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Apacer Technology 78.C1GQ5.C7C0B 8GB

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Gold Key Technology Co Ltd NMSO432F82-3200E 32GB

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G Skill Intl F5-6400J3239G16G 16GB

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Kingston 9905702-135.A00G 8GB

Kingston 9905702-135.A00G 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

Crucial Technology CT8G4SFS8266.C8FD1 8GB

Crucial Technology CT8G4SFS8266.C8FD1 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

SK Hynix HMAA2GS6CJR8N-XN 16GB

SK Hynix HMAA2GS6CJR8N-XN 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Crucial Technology BLS4G4D240FSA.8FARG 4GB

Crucial Technology BLS4G4D240FSA.8FARG 4GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

G Skill Intl F4-3200C15-16GTZKO 16GB

G Skill Intl F4-3200C15-16GTZKO 16GB

Patriot Memory (PDP Systems) PSD22G6672 2GB

Patriot Memory (PDP Systems) PSD22G6672 2GB

Ramaxel Technology RMSA3310ME96HAF-3200 8GB

Ramaxel Technology RMSA3310ME96HAF-3200 8GB