RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology CT8G4SFD824A.C16FF 8GB
比较
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB vs Crucial Technology CT8G4SFD824A.C16FF 8GB
总分
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
总分
Crucial Technology CT8G4SFD824A.C16FF 8GB
差异
规格
评论
差异
需要考虑的原因
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
报告一个错误
更快的读取速度,GB/s
2
16.1
测试中的平均数值
需要考虑的原因
Crucial Technology CT8G4SFD824A.C16FF 8GB
报告一个错误
低于PassMark测试中的延时,ns
29
96
左右 -231% 更低的延时
更快的写入速度,GB/s
11.2
1,336.0
测试中的平均数值
更高的内存带宽,mbps
19200
6400
左右 3 更高的带宽
规格
完整的技术规格清单
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology CT8G4SFD824A.C16FF 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
96
29
读取速度,GB/s
2,725.2
16.1
写入速度,GB/s
1,336.0
11.2
内存带宽,mbps
6400
19200
Other
描述
PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
5-5-5-15 / 800 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
438
2916
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB RAM的比较
takeMS International AG TMS1GB264C081805QI 1GB
Micron Technology 16HTF12864AY-40EB1 1GB
Crucial Technology CT8G4SFD824A.C16FF 8GB RAM的比较
Kingston 99U5403-036.A00G 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Crucial Technology CT8G4SFD824A.C16FF 8GB
Crucial Technology CT51264BD160B.C16F 4GB
Crucial Technology CT16G4SFD8266.M16FJ 16GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Mushkin 99[2/7/4]183 8GB
Kingston 9965525-140.A00LF 8GB
Corsair CMW16GX4M2D3000C16 8GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
G Skill Intl F4-3200C14-16GVR 16GB
Kingston 9905403-038.A00LF 4GB
Chun Well Technology Holding Limited ND4U1636181DRLDE 1
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Crucial Technology CT16G4SFD824A.C16FE 16GB
Crucial Technology CT102464BF160B.16F 8GB
Gloway International (HK) STK2400CL17SNB16GB 16GB
Micron Technology 16JTF51264HZ-1G6M1 4GB
Crucial Technology CT16G4DFD8266.C16FE 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
Crucial Technology CT8G4DFD824A.C16FHP 8GB
Apacer Technology AQD-D4U8GN24-SE 8GB
Corsair CMT32GX4M2C3200C16 16GB
Samsung M393B2G70BH0-CH9 16GB
Corsair CMN16GX4M2Z3200C16 8GB
Samsung M391B5673EH1-CH9 2GB
Patriot Memory (PDP Systems) PSD416G320081 16GB
Nanya Technology NT2GT64U8HD0BY-AD 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N
报告一个错误
×
Bug description
Source link