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Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT4G4SFS8266.M8FE 4GB

Patriot Memory (PDP Systems) PSD22G8002 2GB vs Crucial Technology CT4G4SFS8266.M8FE 4GB

总分
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Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

总分
star star star star star
Crucial Technology CT4G4SFS8266.M8FE 4GB

Crucial Technology CT4G4SFS8266.M8FE 4GB

差异 规格 评论

差异

Patriot Memory (PDP Systems) PSD22G8002 2GB 需要考虑的原因
Patriot Memory (PDP Systems) PSD22G8002 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    60 left arrow 94
    左右 36% 更低的延时
  • 更快的读取速度，GB/s
    4 left arrow 13.2
    测试中的平均数值
Crucial Technology CT4G4SFS8266.M8FE 4GB 需要考虑的原因
Crucial Technology CT4G4SFS8266.M8FE 4GB
报告一个错误
  • 更快的写入速度，GB/s
    6.4 left arrow 2,109.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 6400
    左右 3.33 更高的带宽

规格

完整的技术规格清单
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT4G4SFS8266.M8FE 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    60 left arrow 94
  • 读取速度，GB/s
    4,162.7 left arrow 13.2
  • 写入速度，GB/s
    2,109.3 left arrow 6.4
  • 内存带宽，mbps
    6400 left arrow 21300
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    784 left arrow 1390

Patriot Memory (PDP Systems) PSD22G8002 2GB RAM的比较

Apacer Technology 75.A73AA.G03 2GB
Patriot Memory (PDP Systems) PSD22G80026 2GB

Crucial Technology CT4G4SFS8266.M8FE 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
TwinMOS 8DPT5MK8-TATP 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Crucial Technology CT4G4SFS8266.M8FE 4GB
Crucial Technology CT4G4SFS8266.M8FE 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Wilk Elektronik S.A. GY2400D464L15S/8G 8GB
Wilk Elektronik S.A. GY2400D464L15S/8G 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology CT8G4DFD8213.C16FAD1 8GB
Crucial Technology CT8G4DFD8213.C16FAD1 8GB
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Kingston 9905471-006.A00LF 4GB
Kingston 9905471-006.A00LF 4GB
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Avant Technology W641GU42J9266NB 8GB
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Kingston HP37D4U1S8ME-8X 8GB
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G Skill Intl F4-2133C15-16GFXR 16GB
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Kingston 99U5584-005.A00LF 4GB
Kingston 99U5584-005.A00LF 4GB
Micron Technology 16ATF2G64HZ-2G3B2 16GB
Micron Technology 16ATF2G64HZ-2G3B2 16GB
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Hexon Technology Pte Ltd HEXON 1GB
Hexon Technology Pte Ltd HEXON 1GB
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Corsair CMK8GX4M1A2666C16 8GB
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A-DATA Technology AM2U16BC4P2-B05B 4GB
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Kllisre 8ATF1G64AZ-2G6H1 8GB
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Samsung DDR3 8GB 1600MHz 8GB
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Mushkin 99[2/7/4]191[F/T] 4GB
内存RAM
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Elpida EBJ40EG8BFWB-JS-F 4GB
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V-Color Technology Inc. TN48G26S819-SB 8GB
内存RAM
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Samsung M395T2863QZ4-CF76 1GB
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Kingston CBD24D4S7D8MB-16 16GB
内存RAM
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Nanya Technology NT2GT64U8HD0BY-AD 2GB
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EXCELERAM D4168G8HHSS9CJRB21 16GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
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Kingston ACR24D4S7S8MB-8 8GB
内存RAM
Samsung M393B1K70QB0-CK0 8GB
Samsung M393B1K70QB0-CK0 8GB
Micron Technology 16ATF2G64AZ-3G2E1 16GB
Micron Technology 16ATF2G64AZ-3G2E1 16GB
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