Patriot Memory (PDP Systems) PSD34G16002 4GB vs Corsair CMU16GX4M2D3000C16 8GB

总分

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

总分

Corsair CMU16GX4M2D3000C16 8GB

Corsair CMU16GX4M2D3000C16 8GB

差异规格评论

差异

Patriot Memory (PDP Systems) PSD34G16002 4GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD34G16002 4GB

报告一个错误

Corsair CMU16GX4M2D3000C16 8GB

需要考虑的原因
Corsair CMU16GX4M2D3000C16 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 39

左右 -95% 更低的延时
更快的读取速度，GB/s

19.7 14.7

测试中的平均数值
更快的写入速度，GB/s

14.9 9.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) PSD34G16002 4GB

Corsair CMU16GX4M2D3000C16 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 20
读取速度，GB/s

14.7 19.7
写入速度，GB/s

9.2 14.9
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2322 3400

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT16G4DFD8213.C16FBD 16GB

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Ramaxel Technology RMSA3330MJ78HBF-3200 16GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

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Corsair CMU16GX4M2D3000C16 8GB

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Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR4N

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Asgard VMA41UG-MEC1U2AW1 8GB

Corsair CML8GX3M2A1600C9 4GB

Corsair CML8GX3M2A1600C9 4GB

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Crucial Technology CT16G4SFD8213.C16FBD 16GB

Kingston HX318C10FK/4 4GB

Kingston HX318C10FK/4 4GB

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G Skill Intl F4-4000C16-8GVK 8GB

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Samsung M3 78T3354BZ0-CCC 256MB

Apacer Technology 78.CAGP7.C7Z0B 8GB

Apacer Technology 78.CAGP7.C7Z0B 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Micron Technology 18ASF2G72PZ-2G3B1 16GB

Micron Technology 18ASF2G72PZ-2G3B1 16GB