Crucial Technology CT51264BD1339.M16F 4GB vs A-DATA Technology DDR4 3300 2OZ 4GB

总分

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

总分

A-DATA Technology DDR4 3300 2OZ 4GB

A-DATA Technology DDR4 3300 2OZ 4GB

差异规格评论

差异

Crucial Technology CT51264BD1339.M16F 4GB

需要考虑的原因
Crucial Technology CT51264BD1339.M16F 4GB

报告一个错误

A-DATA Technology DDR4 3300 2OZ 4GB

需要考虑的原因
A-DATA Technology DDR4 3300 2OZ 4GB

报告一个错误

低于PassMark测试中的延时，ns

17 25

左右 -47% 更低的延时
更快的读取速度，GB/s

22 12.1

测试中的平均数值
更快的写入速度，GB/s

17.0 8.6

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Crucial Technology CT51264BD1339.M16F 4GB

A-DATA Technology DDR4 3300 2OZ 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

25 17
读取速度，GB/s

12.1 22.0
写入速度，GB/s

8.6 17.0
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2045 3731

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Micron Technology AFLD48EH1P 8GB

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Kingston KHX1600C9S3L/4G 4GB

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Kingston 9905711-038.A00G 8GB

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A-DATA Technology DQKD1A08 1GB

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Kingston 9905663-008.A00G 16GB

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Crucial Technology CT4G4SFS824A.C8FE 4GB

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Kingmax Semiconductor KLDE88F-B8MO5 2GB

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AMD R5S38G1601U2S 8GB

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G Skill Intl F4-3200C14-8GTZSK 8GB

G Skill Intl F4-3200C14-8GTZSK 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Corsair CMZ16GX3M2A2400C10 8GB

Samsung M378A1G43EB1-CRC 8GB

Samsung M378A1G43EB1-CRC 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Corsair CMD32GX4M4B3600C16 8GB

Corsair CMD32GX4M4B3600C16 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

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Crucial Technology CT8G4DFD824A.C16FBD2 8GB

Crucial Technology CT8G4DFD824A.C16FBD2 8GB