Patriot Memory (PDP Systems) PSD34G16002 4GB vs Crucial Technology BLE4G4D30AEEA.K8FE 4GB

总分

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

总分

Crucial Technology BLE4G4D30AEEA.K8FE 4GB

Crucial Technology BLE4G4D30AEEA.K8FE 4GB

差异规格评论

差异

Patriot Memory (PDP Systems) PSD34G16002 4GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD34G16002 4GB

报告一个错误

Crucial Technology BLE4G4D30AEEA.K8FE 4GB

需要考虑的原因
Crucial Technology BLE4G4D30AEEA.K8FE 4GB

报告一个错误

低于PassMark测试中的延时，ns

26 39

左右 -50% 更低的延时
更快的读取速度，GB/s

19.6 14.7

测试中的平均数值
更快的写入速度，GB/s

15.8 9.2

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) PSD34G16002 4GB

Crucial Technology BLE4G4D30AEEA.K8FE 4GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 26
读取速度，GB/s

14.7 19.6
写入速度，GB/s

9.2 15.8
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2322 3252

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Mushkin 991586 2GB

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Kingston KY7N41-MIE 8GB

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A-DATA Technology AO1P32NC8T1-BCIS 8GB

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ASint Technology SSA302G08-EGN1C 4GB

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Patriot Memory (PDP Systems) PSD416G24002S 16GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Kingston 9905713-030.A00G 8GB

Kingston 9905713-030.A00G 8GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

Micron Technology 16JTF51264HZ-1G6M1 4GB

SK Hynix HMA451U6MFR8N-TF 4GB

SK Hynix HMA451U6MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 8ATF2G64HZ-2G3A1 16GB

Micron Technology 8ATF2G64HZ-2G3A1 16GB