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Patriot Memory (PDP Systems) PSD34G16002 4GB
Inmos + 256MB

Patriot Memory (PDP Systems) PSD34G16002 4GB vs Inmos + 256MB

总分
star star star star star
Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

总分
star star star star star
Inmos + 256MB

Inmos + 256MB

差异 规格 评论

差异

Patriot Memory (PDP Systems) PSD34G16002 4GB 需要考虑的原因
Patriot Memory (PDP Systems) PSD34G16002 4GB
报告一个错误
  • 更快的读取速度，GB/s
    14.7 left arrow 11.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    9.2 left arrow 9.1
    测试中的平均数值
Inmos + 256MB 需要考虑的原因
Inmos + 256MB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 39
    左右 -30% 更低的延时
  • 更高的内存带宽，mbps
    16800 left arrow 12800
    左右 1.31 更高的带宽

规格

完整的技术规格清单
Patriot Memory (PDP Systems) PSD34G16002 4GB
Inmos + 256MB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 30
  • 读取速度，GB/s
    14.7 left arrow 11.5
  • 写入速度，GB/s
    9.2 left arrow 9.1
  • 内存带宽，mbps
    12800 left arrow 16800
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-16800, TBD1 V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow no data
  • 排名PassMark (越多越好)
    2322 left arrow 2318

Patriot Memory (PDP Systems) PSD34G16002 4GB RAM的比较

Transcend Information JM1600KLN-4GK 2GB
Micron Technology ITC 4GB

Inmos + 256MB RAM的比较

Apacer Technology AQD-D4U8GN24-SE 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M393B1K70CH0-CH9 8GB
Samsung M393B1K70CH0-CH9 8GB
G Skill Intl F4-3200C15-16GTZKW 16GB
G Skill Intl F4-3200C15-16GTZKW 16GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Inmos + 256MB
Inmos + 256MB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Corsair CMT64GX4M4K3600C16 16GB
Corsair CMT64GX4M4K3600C16 16GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
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内存RAM
Kingston 99U5471-056.A00LF 8GB
Kingston 99U5471-056.A00LF 8GB
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Chun Well Technology Holding Limited CL18-20-20 D4-3600
内存RAM
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
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Kingston 9905599-025.A00G 8GB
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Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N-UH 4GB
Hynix Semiconductor (Hyundai Electronics) HMA851S6AFR6N
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Kingston XRMWRN-HYA 16GB
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内存RAM
Kingston 9965433-034.A00LF 4GB
Kingston 9965433-034.A00LF 4GB
Crucial Technology BLS8G4D240FSC.M16FAD 8GB
Crucial Technology BLS8G4D240FSC.M16FAD 8GB
内存RAM
Samsung M471B5173DB0-YK0 4GB
Samsung M471B5173DB0-YK0 4GB
Crucial Technology CT4G4SFS824A.C8FBR2 4GB
Crucial Technology CT4G4SFS824A.C8FBR2 4GB
内存RAM
Corsair CML16GX3M2A1600C10 8GB
Corsair CML16GX3M2A1600C10 8GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
Micron Technology 9ASF51272PZ-2G1AX 4GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
SK Hynix HMA41GU7AFR8N-TF 8GB
SK Hynix HMA41GU7AFR8N-TF 8GB
内存RAM
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Nanya Technology NT4GC72B4NA1NL-CG 4GB
Crucial Technology BLE4G4D30AEEA.K8FE 4GB
Crucial Technology BLE4G4D30AEEA.K8FE 4GB
内存RAM
Kingston KVR16N11/8-SP 8GB
Kingston KVR16N11/8-SP 8GB
Kingmax Semiconductor GZOH23F-18---------- 16GB
Kingmax Semiconductor GZOH23F-18---------- 16GB
内存RAM