Patriot Memory (PDP Systems) PSD34G16002 4GB vs Samsung M393A2K40BB2-CTD 16GB

总分

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

总分

Samsung M393A2K40BB2-CTD 16GB

Samsung M393A2K40BB2-CTD 16GB

差异规格评论

差异

Patriot Memory (PDP Systems) PSD34G16002 4GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD34G16002 4GB

报告一个错误

低于PassMark测试中的延时，ns

39 65

左右 40% 更低的延时
更快的读取速度，GB/s

14.7 8.5

测试中的平均数值
更快的写入速度，GB/s

9.2 5.8

测试中的平均数值

Samsung M393A2K40BB2-CTD 16GB

需要考虑的原因
Samsung M393A2K40BB2-CTD 16GB

报告一个错误

更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) PSD34G16002 4GB

Samsung M393A2K40BB2-CTD 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 65
读取速度，GB/s

14.7 8.5
写入速度，GB/s

9.2 5.8
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2322 1981

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Crucial Technology BL8G32C16U4R.M8FE1 8GB

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Crucial Technology CT51264AC800.C16FC 4GB

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Gold Key Technology Co Ltd GKE160SO102408-2933 16GB

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Corsair CMK16GX4M2D3600C18 8GB

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A-DATA Technology DDR4 2666 8GB

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G Skill Intl F3-1866C8-8GTX 8GB

Crucial Technology BL8G32C16U4R.M8FE 8GB

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G Skill Intl F3-1866C8-8GTX 8GB

Crucial Technology BL8G30C15U4R.M8FE1 8GB

Crucial Technology BL8G30C15U4R.M8FE1 8GB

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

Crucial Technology CT4G4DFS8213.M8FB 4GB

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Team Group Inc. Vulcan-1600 4GB

Team Group Inc. Vulcan-1600 4GB

Samsung M471A2G43AB2-CWE 16GB

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Crucial Technology CT16G4SFD8266.M16FRS 16GB

Crucial Technology CT16G4SFD8266.M16FRS 16GB