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Patriot Memory (PDP Systems) PSD34G16002 4GB
Samsung M471A2K43EB1-CTD 16GB

Patriot Memory (PDP Systems) PSD34G16002 4GB vs Samsung M471A2K43EB1-CTD 16GB

总分
star star star star star
Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

总分
star star star star star
Samsung M471A2K43EB1-CTD 16GB

Samsung M471A2K43EB1-CTD 16GB

差异 规格 评论

差异

Patriot Memory (PDP Systems) PSD34G16002 4GB 需要考虑的原因
Patriot Memory (PDP Systems) PSD34G16002 4GB
报告一个错误
Samsung M471A2K43EB1-CTD 16GB 需要考虑的原因
Samsung M471A2K43EB1-CTD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    34 left arrow 39
    左右 -15% 更低的延时
  • 更快的读取速度，GB/s
    15.3 left arrow 14.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.7 left arrow 9.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    21300 left arrow 12800
    左右 1.66 更高的带宽

规格

完整的技术规格清单
Patriot Memory (PDP Systems) PSD34G16002 4GB
Samsung M471A2K43EB1-CTD 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    39 left arrow 34
  • 读取速度，GB/s
    14.7 left arrow 15.3
  • 写入速度，GB/s
    9.2 left arrow 11.7
  • 内存带宽，mbps
    12800 left arrow 21300
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    2322 left arrow 2962

Patriot Memory (PDP Systems) PSD34G16002 4GB RAM的比较

Transcend Information JM1600KLN-4GK 2GB
Micron Technology ITC 4GB

Samsung M471A2K43EB1-CTD 16GB RAM的比较

Kingston 9905403-156.A00LF 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Samsung M471A2K43EB1-CTD 16GB
Samsung M471A2K43EB1-CTD 16GB
内存RAM
Kingston 9905403-038.A00LF 4GB
Kingston 9905403-038.A00LF 4GB
Apacer Technology AQD-D4U8GN26-SE 8GB
Apacer Technology AQD-D4U8GN26-SE 8GB
内存RAM
G Skill Intl F3-1866C8-8GTX 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Kingston KHX2933C15D4/8GX 8GB
Kingston KHX2933C15D4/8GX 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Crucial Technology CT16G4DFD8213.M16FB 16GB
Crucial Technology CT16G4DFD8213.M16FB 16GB
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Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
G Skill Intl F4-3300C16-16GTZ 16GB
G Skill Intl F4-3300C16-16GTZ 16GB
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Samsung M393B1K70CH0-CH9 8GB
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INTENSO 5641152 4GB
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SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
Kingston 9905678-027.A00G 8GB
Kingston 9905678-027.A00G 8GB
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Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-3200C16-8GTZR 8GB
G Skill Intl F4-3200C16-8GTZR 8GB
内存RAM
SK Hynix HMT325S6CFR8C-H9 2GB
SK Hynix HMT325S6CFR8C-H9 2GB
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Samsung SF4641G8CKHI6DFSDS 8GB
内存RAM
Kingston 9905316-106.A02LF 1GB
Kingston 9905316-106.A02LF 1GB
G Skill Intl F4-4000C16-16GVK 16GB
G Skill Intl F4-4000C16-16GVK 16GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Crucial Technology CT8G4DFRA266.C4FE 8GB
Crucial Technology CT8G4DFRA266.C4FE 8GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Kingston 9965600-005.A00G 16GB
Kingston 9965600-005.A00G 16GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Micron Technology CT4G4DFS8213.8FA11 4GB
Micron Technology CT4G4DFS8213.8FA11 4GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Kllisre 8GB
Kllisre 8GB
内存RAM