Patriot Memory (PDP Systems) PSD38G16002S 8GB vs Corsair CMT128GX4M8C3000C15 16GB

总分

Patriot Memory (PDP Systems) PSD38G16002S 8GB

Patriot Memory (PDP Systems) PSD38G16002S 8GB

总分

Corsair CMT128GX4M8C3000C15 16GB

Corsair CMT128GX4M8C3000C15 16GB

差异规格评论

差异

Patriot Memory (PDP Systems) PSD38G16002S 8GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD38G16002S 8GB

报告一个错误

更快的读取速度，GB/s

12.2 9.9

测试中的平均数值

Corsair CMT128GX4M8C3000C15 16GB

需要考虑的原因
Corsair CMT128GX4M8C3000C15 16GB

报告一个错误

低于PassMark测试中的延时，ns

37 41

左右 -11% 更低的延时
更快的写入速度，GB/s

12.4 8.6

测试中的平均数值
更高的内存带宽，mbps

17000 12800

左右 1.33 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) PSD38G16002S 8GB

Corsair CMT128GX4M8C3000C15 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 37
读取速度，GB/s

12.2 9.9
写入速度，GB/s

8.6 12.4
内存带宽，mbps

12800 17000

Other

描述

PC3-12800, 1.5V, CAS Supported: 5 6 7 8 9 10 11 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2062 2572

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Micron Technology 8ATF1G64AZ-2G1B1 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Chun Well Technology Holding Limited CL17-17-17 D4-2400 8GB

Chun Well Technology Holding Limited CL17-17-17 D4-2400

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Crucial Technology BL8G32C16U4W.8FE 8GB

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AMD R5316G1609U2K 8GB

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Smart Modular SG564568FG8N6KF-Z2 2GB

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G Skill Intl F4-2133C15-8GRR 8GB