Patriot Memory (PDP Systems) PSD38G1600L2S 8GB vs Crucial Technology BLS16G4D30AESB.M16FE 16GB

总分

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

总分

Crucial Technology BLS16G4D30AESB.M16FE 16GB

Crucial Technology BLS16G4D30AESB.M16FE 16GB

差异规格评论

差异

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

报告一个错误

Crucial Technology BLS16G4D30AESB.M16FE 16GB

需要考虑的原因
Crucial Technology BLS16G4D30AESB.M16FE 16GB

报告一个错误

低于PassMark测试中的延时，ns

26 41

左右 -58% 更低的延时
更快的读取速度，GB/s

18.5 14

测试中的平均数值
更快的写入速度，GB/s

14.1 9.2

测试中的平均数值
更高的内存带宽，mbps

19200 12800

左右 1.5 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Crucial Technology BLS16G4D30AESB.M16FE 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 26
读取速度，GB/s

14.0 18.5
写入速度，GB/s

9.2 14.1
内存带宽，mbps

12800 19200

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

9-9-9-24 / 1600 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

2356 3596

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Crucial Technology BLS16G4D30AESB.M16FE 16GB

Crucial Technology BLS16G4D30AESB.M16FE 16GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Crucial Technology CT8G4SFS8213.C8FBD1 8GB

Crucial Technology CT8G4SFS8213.C8FBD1 8GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 16GB

Shenzhen Chuangshifeida Technology DERLER 16GB2666MHz 1

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Corsair CMD16GX4M2B3733C17 8GB

Corsair CMD16GX4M2B3733C17 8GB

Kingston 9905469-124.A00LF 4GB

Kingston 9905469-124.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7MFR8N

Kingston 9905469-124.A00LF 4GB

Kingston 9905469-124.A00LF 4GB

Corsair CMK16GX4M2F4500C19 8GB

Corsair CMK16GX4M2F4500C19 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

InnoDisk Corporation M4SI-BGS2OC0K-A 32GB

InnoDisk Corporation M4SI-BGS2OC0K-A 32GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Kingston 99U5663-007.A00G 16GB

Kingston 99U5663-007.A00G 16GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Crucial Technology CT8G4SFS8213.C8FAD1 8GB

Crucial Technology CT8G4SFS8213.C8FAD1 8GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston KTD3KX-HYA 8GB

Kingston KTD3KX-HYA 8GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

Intel 99P5471-013.A00LF 4GB

Intel 99P5471-013.A00LF 4GB

AMD R7S48G2400U2S 8GB

AMD R7S48G2400U2S 8GB

Samsung M4 70T2953EZ3-CE6 1GB

Samsung M4 70T2953EZ3-CE6 1GB

AMD R9S48G3206U2S 8GB

AMD R9S48G3206U2S 8GB

Kingston ACR16D3LU1MNG/8G 8GB

Kingston ACR16D3LU1MNG/8G 8GB

Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB

Chun Well Technology Holding Limited CL22-22-22 D4-3200