ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB vs Samsung M378A1G43DB0-CPB 8GB

总分

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

总分

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

差异规格评论

差异

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

需要考虑的原因
ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

报告一个错误

更快的读取速度，GB/s

21.4 15

测试中的平均数值
更快的写入速度，GB/s

14.3 10.3

测试中的平均数值
更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

Samsung M378A1G43DB0-CPB 8GB

需要考虑的原因
Samsung M378A1G43DB0-CPB 8GB

报告一个错误

低于PassMark测试中的延时，ns

36 37

左右 -3% 更低的延时

规格

完整的技术规格清单

ATP Electronics Inc. X4C16QE8BNRCME-E-LI1 16GB

Samsung M378A1G43DB0-CPB 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

37 36
读取速度，GB/s

21.4 15.0
写入速度，GB/s

14.3 10.3
内存带宽，mbps

19200 17000

Other

描述

PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3448 2569

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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