Patriot Memory (PDP Systems) PSD38G1600L2S 8GB vs Micron Technology 8ATF1G64HZ-2G6D1 8GB

总分

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

总分

Micron Technology 8ATF1G64HZ-2G6D1 8GB

Micron Technology 8ATF1G64HZ-2G6D1 8GB

差异规格评论

差异

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

需要考虑的原因
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

报告一个错误

Micron Technology 8ATF1G64HZ-2G6D1 8GB

需要考虑的原因
Micron Technology 8ATF1G64HZ-2G6D1 8GB

报告一个错误

低于PassMark测试中的延时，ns

34 41

左右 -21% 更低的延时
更快的读取速度，GB/s

15.8 14

测试中的平均数值
更快的写入速度，GB/s

12.4 9.2

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Micron Technology 8ATF1G64HZ-2G6D1 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 34
读取速度，GB/s

14.0 15.8
写入速度，GB/s

9.2 12.4
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2356 2830

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

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Micron Technology 8ATF1G64HZ-2G6D1 8GB

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Patriot Memory (PDP Systems) PSD38G16002 8GB

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Micron Technology 8ATF1G64HZ-2G3H1 8GB

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Essencore Limited KD48GU88C-26N1600 8GB

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EVGA 8GX-D4-3000-MR 8GB

EVGA 8GX-D4-3000-MR 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

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G Skill Intl F4-3200C16-16GSXWB 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMK16GX4M2E4000C19 8GB

Corsair CMK16GX4M2E4000C19 8GB

Kingston KVR533D2N4 512MB

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Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

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Golden Empire 1GB DDR2 800 CAS=4 1GB

Kingston 99U5700-028.A00G 8GB

Kingston 99U5700-028.A00G 8GB