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Peak Electronics 256X64M-67E 2GB
Corsair CMD16GX4M4B3600C18 4GB
比较
Peak Electronics 256X64M-67E 2GB vs Corsair CMD16GX4M4B3600C18 4GB
总分
Peak Electronics 256X64M-67E 2GB
总分
Corsair CMD16GX4M4B3600C18 4GB
差异
规格
评论
差异
需要考虑的原因
Peak Electronics 256X64M-67E 2GB
报告一个错误
更快的读取速度,GB/s
5
16.6
测试中的平均数值
需要考虑的原因
Corsair CMD16GX4M4B3600C18 4GB
报告一个错误
低于PassMark测试中的延时,ns
30
39
左右 -30% 更低的延时
更快的写入速度,GB/s
12.3
1,597.0
测试中的平均数值
更高的内存带宽,mbps
17000
5300
左右 3.21 更高的带宽
规格
完整的技术规格清单
Peak Electronics 256X64M-67E 2GB
Corsair CMD16GX4M4B3600C18 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
39
30
读取速度,GB/s
5,022.9
16.6
写入速度,GB/s
1,597.0
12.3
内存带宽,mbps
5300
17000
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度
5-5-5-15 / 667 MHz
14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)
753
3279
Peak Electronics 256X64M-67E 2GB RAM的比较
A Force Manufacturing Ltd. 256X64M-67E 2GB
Kingston ACR26D4U9S8MH-8 8GB
Corsair CMD16GX4M4B3600C18 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Micron Technology 9ASF51272PZ-2G3B1 4GB
Kingston ACR512X64D3S13C9G 4GB
Kingston HP26D4U9S1ME-4 4GB
Corsair CMY8GX3M2A2133C8 4GB
Kingston KVR24N17S8/4 4GB
Kingston 9905403-011.A03LF 2GB
Corsair CMK32GX4M4B3866C18 8GB
Kingston KVR800D2N6/2G 2GB
G Skill Intl F4-3200C14-8GVR 8GB
Apacer Technology 78.A1GC6.9H10C 2GB
Teclast TLD416G26A30 16GB
Kingston ACR256X64D3S1333C9 2GB
G Skill Intl F4-3600C14-16GTRS 16GB
Apacer Technology 78.01GA0.9K5 1GB
Kingston 99U5712-009.A00G 16GB
Kingston KVT8FP-HYC 4GB
Crucial Technology BLM8G44C19U4B.M8FE1 8GB
Samsung 1600 CL10 Series 8GB
Crucial Technology BLS16G4D240FSB.16FAD 16GB
Samsung M386B4G70DM0-CMA4 32GB
Crucial Technology CT16G4SFD8266.16FE1 16GB
Ramos Technology EWB8GB681CA3-16IC 8GB
Avexir Technologies Corporation DDR4-3200 C16 8GB 8GB
SK Hynix HMT451S6BFR8A-PB 4GB
Crucial Technology BLS16G4D30BESB.16FD 16GB
Samsung M391B5673EH1-CH9 2GB
Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB
报告一个错误
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Bug description
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