Peak Electronics 256X64M-67E 2GB vs Essencore Limited IM44GU48N28-GGGHM 4GB

总分

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

总分

Essencore Limited IM44GU48N28-GGGHM 4GB

Essencore Limited IM44GU48N28-GGGHM 4GB

差异规格评论

差异

Peak Electronics 256X64M-67E 2GB

需要考虑的原因
Peak Electronics 256X64M-67E 2GB

报告一个错误

低于PassMark测试中的延时，ns

39 67

左右 42% 更低的延时
更快的读取速度，GB/s

5 16.5

测试中的平均数值

Essencore Limited IM44GU48N28-GGGHM 4GB

需要考虑的原因
Essencore Limited IM44GU48N28-GGGHM 4GB

报告一个错误

更快的写入速度，GB/s

8.3 1,597.0

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Peak Electronics 256X64M-67E 2GB

Essencore Limited IM44GU48N28-GGGHM 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

39 67
读取速度，GB/s

5,022.9 16.5
写入速度，GB/s

1,597.0 8.3
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

753 1876

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Crucial Technology CT2K102464BD160B 8GB

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Micron Technology 8ATF1G64HZ-2G3H1 8GB

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Crucial Technology CT16G4SFD824A.M16FD1 16GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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Kingston 9905403-447.A00LF 4GB

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Shanghai Kuxin Microelectronics Ltd NMUD416E82-3600 16GB

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Hexon Technology Pte Ltd HEXON 1GB

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SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

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V-GEN D4H8GL32A8TS 8GB

Elpida EBJ40EG8BFWB-JS-F 4GB

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Corsair CMD32GX4M4B3200C16 8GB

Corsair CMD32GX4M4B3200C16 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

G Skill Intl F4-3300C16-16GTZKW 16GB

G Skill Intl F4-3300C16-16GTZKW 16GB

Kingston 9905469-143.A00LF 4GB

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Kingston 9905734-063.A00G 32GB

Kingston 9905734-063.A00G 32GB