Peak Electronics 256X64M-67E 2GB vs InnoDisk Corporation M4S0-8GS1NCIK 8GB

总分

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

总分

InnoDisk Corporation M4S0-8GS1NCIK 8GB

InnoDisk Corporation M4S0-8GS1NCIK 8GB

差异规格评论

差异

Peak Electronics 256X64M-67E 2GB

需要考虑的原因
Peak Electronics 256X64M-67E 2GB

报告一个错误

更快的读取速度，GB/s

5 15.5

测试中的平均数值

InnoDisk Corporation M4S0-8GS1NCIK 8GB

需要考虑的原因
InnoDisk Corporation M4S0-8GS1NCIK 8GB

报告一个错误

低于PassMark测试中的延时，ns

30 39

左右 -30% 更低的延时
更快的写入速度，GB/s

7.6 1,597.0

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Peak Electronics 256X64M-67E 2GB

InnoDisk Corporation M4S0-8GS1NCIK 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

39 30
读取速度，GB/s

5,022.9 15.5
写入速度，GB/s

1,597.0 7.6
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

753 2208

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

Micron Technology 16G2666CL19 16GB

Micron Technology 16G2666CL19 16GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology BL16G32C16S4B.M8FB1 16GB

Crucial Technology BL16G32C16S4B.M8FB1 16GB

SK Hynix HYMP125S64CP8-S6 2GB

SK Hynix HYMP125S64CP8-S6 2GB

G Skill Intl F4-3600C18-32GTRG 32GB

G Skill Intl F4-3600C18-32GTRG 32GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Samsung M471A5644EB0-CPB 2GB

Samsung M471A5644EB0-CPB 2GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

A-DATA Technology AO1P32NCSV1-BEWS 16GB

A-DATA Technology AO1P32NCSV1-BEWS 16GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

Micron Technology 16JSF25664HZ-1G1F1 2GB

G Skill Intl F4-3333C16-8GTZSW 8GB

G Skill Intl F4-3333C16-8GTZSW 8GB

Kingston KHX318C10FR/8G 8GB

Kingston KHX318C10FR/8G 8GB

Apacer Technology 78.CAGPL.ARC0B 8GB

Apacer Technology 78.CAGPL.ARC0B 8GB

Kingston 9905471-074.A00LF 8GB

Kingston 9905471-074.A00LF 8GB

Apacer Technology GD2.1140CH.001 4GB

Apacer Technology GD2.1140CH.001 4GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Crucial Technology BLS8G4D26BFSCK.8FBD 8GB

Crucial Technology BLS8G4D26BFSCK.8FBD 8GB

TwinMOS 8DHE3MN8-HATP 2GB

TwinMOS 8DHE3MN8-HATP 2GB

Corsair CMT64GX4M8X3000C15 8GB

Corsair CMT64GX4M8X3000C15 8GB

Samsung M393B2G70BH0-CK0 16GB

Samsung M393B2G70BH0-CK0 16GB

Crucial Technology BLS8G4D240FSB.M16FAD 8GB

Crucial Technology BLS8G4D240FSB.M16FAD 8GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N-TF 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7MFR8N

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

A-DATA Technology AO2P24HC8T1-BTBS 8GB

A-DATA Technology AO2P24HC8T1-BTBS 8GB

Crucial Technology CT102464BA160B.M16 8GB

Crucial Technology CT102464BA160B.M16 8GB

Ramaxel Technology RMUA5110MB78HAF-2400 8GB

Ramaxel Technology RMUA5110MB78HAF-2400 8GB