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Peak Electronics 256X64M-67E 2GB
Kingston 9905700-013.A00G 8GB
比较
Peak Electronics 256X64M-67E 2GB vs Kingston 9905700-013.A00G 8GB
总分
Peak Electronics 256X64M-67E 2GB
总分
Kingston 9905700-013.A00G 8GB
差异
规格
评论
差异
需要考虑的原因
Peak Electronics 256X64M-67E 2GB
报告一个错误
低于PassMark测试中的延时,ns
39
47
左右 17% 更低的延时
更快的读取速度,GB/s
5
13.9
测试中的平均数值
需要考虑的原因
Kingston 9905700-013.A00G 8GB
报告一个错误
更快的写入速度,GB/s
7.3
1,597.0
测试中的平均数值
更高的内存带宽,mbps
21300
5300
左右 4.02 更高的带宽
规格
完整的技术规格清单
Peak Electronics 256X64M-67E 2GB
Kingston 9905700-013.A00G 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
39
47
读取速度,GB/s
5,022.9
13.9
写入速度,GB/s
1,597.0
7.3
内存带宽,mbps
5300
21300
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
753
2074
Peak Electronics 256X64M-67E 2GB RAM的比较
A Force Manufacturing Ltd. 256X64M-67E 2GB
Kingston ACR26D4U9S8MH-8 8GB
Kingston 9905700-013.A00G 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Peak Electronics 256X64M-67E 2GB
Kingston 9905700-013.A00G 8GB
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Micron Technology 8ATF2G64HZ-2G3A1 16GB
A-DATA Technology DDR3 1866 2OZ 4GB
Kllisre M378A1K43BB2-CRC 8GB
Samsung M391B5673EH1-CH9 2GB
Golden Empire CL15-15-15 D4-2133 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BL8G32C16U4WL.8FE 8GB
A-DATA Technology DDR3 1866 2OZ 4GB
Atla Electronics Co. Ltd. AD4SST8GT1WB-FQGE 8GB
A-DATA Technology VDQVE1B16 2GB
Neo Forza NMUD480E82-2666 8GB
Samsung M378B5773DH0-CH9 2GB
Kingston KHX2400C14/16G 16GB
Samsung M393B2G70BH0-CH9 16GB
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB
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