Samsung M393B2G70BH0-CH9 16GB vs Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

总分

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

总分

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

差异规格评论

差异

Samsung M393B2G70BH0-CH9 16GB

需要考虑的原因
Samsung M393B2G70BH0-CH9 16GB

报告一个错误

低于PassMark测试中的延时，ns

33 37

左右 11% 更低的延时

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

需要考虑的原因
Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

报告一个错误

更快的读取速度，GB/s

16 8

测试中的平均数值
更快的写入速度，GB/s

12.6 7.3

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

Samsung M393B2G70BH0-CH9 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

33 37
读取速度，GB/s

8.0 16.0
写入速度，GB/s

7.3 12.6
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1911 2808

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

Kingston KHX426C13/8G 8GB

Kingston KHX426C13/8G 8GB

Micron Technology 16KTF51264HZ-1G6M1 4GB

Micron Technology 16KTF51264HZ-1G6M1 4GB

Gold Key Technology Co Ltd NMUD480E85-3000D 8GB

Gold Key Technology Co Ltd NMUD480E85-3000D 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Essencore Limited IM4AGS88N26-GIIHA0 16GB

Essencore Limited IM4AGS88N26-GIIHA0 16GB

Kingston K1N7HK-ELC 2GB

Kingston K1N7HK-ELC 2GB

G Skill Intl F4-3000C15-4GRR 4GB

G Skill Intl F4-3000C15-4GRR 4GB

Elpida EBJ40UG8BBU0-GN-F 4GB

Elpida EBJ40UG8BBU0-GN-F 4GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

Shanghai Kuxin Microelectronics Ltd NMUD480E82-3600 8GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Corsair CMD16GX4M4B3000C15 4GB

Corsair CMD16GX4M4B3000C15 4GB

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

G Skill Intl F4-2133C15-8GRR 8GB

G Skill Intl F4-2133C15-8GRR 8GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

Apacer Technology 78.CAGP7.C7C0B 8GB

Apacer Technology 78.CAGP7.C7C0B 8GB

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

Corsair CMW128GX4M4E3200C16 32GB

Corsair CMW128GX4M4E3200C16 32GB

Kingston 9905458-017.A01LF 4GB

Kingston 9905458-017.A01LF 4GB

Apacer Technology 78.B1GN3.4032B 4GB

Apacer Technology 78.B1GN3.4032B 4GB

Samsung M393B1G70QH0-YK0 8GB

Samsung M393B1G70QH0-YK0 8GB

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

Micron Technology 18ASF2G72PDZ-2G3B1 16GB

Kingston 9905403-061.A00LF 2GB

Kingston 9905403-061.A00LF 2GB

Kingston RB24D4U7S8MB-8 8GB

Kingston RB24D4U7S8MB-8 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB