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Peak Electronics 256X64M-67E 2GB
Micron Technology 16ATF4G64AZ-2G6B1 32GB
比较
Peak Electronics 256X64M-67E 2GB vs Micron Technology 16ATF4G64AZ-2G6B1 32GB
总分
Peak Electronics 256X64M-67E 2GB
总分
Micron Technology 16ATF4G64AZ-2G6B1 32GB
差异
规格
评论
差异
需要考虑的原因
Peak Electronics 256X64M-67E 2GB
报告一个错误
低于PassMark测试中的延时,ns
39
46
左右 15% 更低的延时
更快的读取速度,GB/s
5
13.7
测试中的平均数值
需要考虑的原因
Micron Technology 16ATF4G64AZ-2G6B1 32GB
报告一个错误
更快的写入速度,GB/s
12.0
1,597.0
测试中的平均数值
更高的内存带宽,mbps
21300
5300
左右 4.02 更高的带宽
规格
完整的技术规格清单
Peak Electronics 256X64M-67E 2GB
Micron Technology 16ATF4G64AZ-2G6B1 32GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
39
46
读取速度,GB/s
5,022.9
13.7
写入速度,GB/s
1,597.0
12.0
内存带宽,mbps
5300
21300
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
753
2961
Peak Electronics 256X64M-67E 2GB RAM的比较
A Force Manufacturing Ltd. 256X64M-67E 2GB
Kingston ACR26D4U9S8MH-8 8GB
Micron Technology 16ATF4G64AZ-2G6B1 32GB RAM的比较
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
AMD R534G1601U1S-UO 4GB
Crucial Technology BL16G36C16U4W.M8FB1 16GB
Smart Modular SG564568FG8N6KF-Z2 2GB
G Skill Intl F4-3200C16-16GSXFB 16GB
Samsung M3 78T2863QZS-CF7 1GB
Hyundai Inc GP-GR26C16S8K1HU408 8GB
G Skill Intl F3-1866C8-8GTX 8GB
Kingston 99U5711-001.A00G 4GB
Samsung M3 78T2863QZS-CF7 1GB
Micron Technology 8ATF1G64HZ-2G6H1 8GB
G Skill Intl F5-6400J3239G16G 16GB
G Skill Intl F4-4000C15-8GTZR 8GB
Kingmax Semiconductor FLFE85F-C8KM9 2GB
Corsair CMD64GX4M4B3333C16 16GB
Samsung M393B5170FH0-CK0 4GB
Kingston 9905678-058.A00G 4GB
Samsung M471B5173DB0-YK0 4GB
Transcend Information TS512MSH64V4H 4GB
Kingston 99U5429-014.A00LF 4GB
Corsair CM4X16GE2400C16K4 16GB
Samsung M391B5673EH1-CH9 2GB
Hynix Semiconductor (Hyundai Electronics) HMA84GR7MFR4N
Samsung M386B4G70DM0-CMA4 32GB
Patriot Memory (PDP Systems) PSD48G213382 8GB
TwinMOS 8DHE3MN8-HATP 2GB
Crucial Technology BL16G32C16U4RL.M16FE 16GB
Corsair CMSO4GX3M1C1600C11 4GB
Hynix Semiconductor (Hyundai Electronics) HMA82GR7AFR8N
报告一个错误
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Bug description
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