Peak Electronics 256X64M-67E 2GB vs Samsung M391A1K43BB2-CTD 8GB

总分

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

总分

Samsung M391A1K43BB2-CTD 8GB

Samsung M391A1K43BB2-CTD 8GB

差异规格评论

差异

Peak Electronics 256X64M-67E 2GB

需要考虑的原因
Peak Electronics 256X64M-67E 2GB

报告一个错误

低于PassMark测试中的延时，ns

39 64

左右 39% 更低的延时
更快的读取速度，GB/s

5 17.5

测试中的平均数值

Samsung M391A1K43BB2-CTD 8GB

需要考虑的原因
Samsung M391A1K43BB2-CTD 8GB

报告一个错误

更快的写入速度，GB/s

9.3 1,597.0

测试中的平均数值
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Peak Electronics 256X64M-67E 2GB

Samsung M391A1K43BB2-CTD 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

39 64
读取速度，GB/s

5,022.9 17.5
写入速度，GB/s

1,597.0 9.3
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

753 2205

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Team Group Inc. UD5-6400 16GB

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Apacer Technology GD2.1527WH.002 8GB

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Crucial Technology CT16G4SFD8213.C16FDD 16GB

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Kingston 99U5458-008.A00LF 4GB

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SanMax Technologies Inc. SMD4-U16G48MB-24R 16GB

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Kingston KHX1866C9D3/8GX 8GB

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Micron Technology 16ATF2G64HZ-2G6J1 16GB

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Samsung M378B5673EH1-CF8 2GB

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Corsair CM3X8GA2400C11Y2R 8GB

Corsair CM3X8GA2400C11Y2R 8GB

Crucial Technology CT16G4DFRA32A.C8FB 16GB

Crucial Technology CT16G4DFRA32A.C8FB 16GB

Kingston 9965662-016.A00G 16GB

Kingston 9965662-016.A00G 16GB

Wilk Elektronik S.A. GY2133D464L15S/8G 8GB

Wilk Elektronik S.A. GY2133D464L15S/8G 8GB

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Mushkin 991679ES 996679ES 2GB

Apacer Technology 78.CAGNT.4050B 8GB

Apacer Technology 78.CAGNT.4050B 8GB

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Kingston 9905403-011.A03LF 2GB

Smart Modular SF4641G8CK8IEHLSBG 8GB

Smart Modular SF4641G8CK8IEHLSBG 8GB