Samsung M4 70T2864QZ3-CE6 1GB vs Crucial Technology CT16G4SFD8213.C16FDD 16GB

总分

Samsung M4 70T2864QZ3-CE6 1GB

Samsung M4 70T2864QZ3-CE6 1GB

总分

Crucial Technology CT16G4SFD8213.C16FDD 16GB

Crucial Technology CT16G4SFD8213.C16FDD 16GB

差异规格评论

差异

Samsung M4 70T2864QZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2864QZ3-CE6 1GB

报告一个错误

更快的读取速度，GB/s

3 15.1

测试中的平均数值

Crucial Technology CT16G4SFD8213.C16FDD 16GB

需要考虑的原因
Crucial Technology CT16G4SFD8213.C16FDD 16GB

报告一个错误

低于PassMark测试中的延时，ns

30 65

左右 -117% 更低的延时
更快的写入速度，GB/s

9.9 1,574.4

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2864QZ3-CE6 1GB

Crucial Technology CT16G4SFD8213.C16FDD 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

65 30
读取速度，GB/s

3,858.9 15.1
写入速度，GB/s

1,574.4 9.9
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

607 2732

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Corsair CMK32GX4M4B3733C17 8GB

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Crucial Technology CT32G4DFD8266.C16FE 32GB

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Crucial Technology CT8G48C40U5.M4A1 8GB

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Samsung M4 70T2864QZ3-CE6 1GB

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Crucial Technology CT16G4SFD8213.C16FDD 16GB

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AMD R5S38G1601U2S 8GB

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Corsair CMD16GX4M2B3866C18 8GB

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SK Hynix HYMP31GF72CMP4D5Y5 8GB

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Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

G Skill Intl F4-3000C16-16GSXFB 16GB

G Skill Intl F4-3000C16-16GSXFB 16GB

Kingston 9905403-038.A00LF 4GB

Kingston 9905403-038.A00LF 4GB

A-DATA Technology AO1P32NC8W1-BDAS 8GB

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Corsair CMX4GX3M2A1600C9 2GB

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Micron Technology 8ATF1G64AZ-2G3E1 8GB

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Kingston 9965525-018.A00LF 4GB

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Samsung M393A4K40BB2-CTD 32GB

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