Samsung M4 70T2864QZ3-CE6 1GB vs Kingston KVR800D2S6/4G 4GB

总分

Samsung M4 70T2864QZ3-CE6 1GB

Samsung M4 70T2864QZ3-CE6 1GB

总分

Kingston KVR800D2S6/4G 4GB

Kingston KVR800D2S6/4G 4GB

差异规格评论

差异

Samsung M4 70T2864QZ3-CE6 1GB

需要考虑的原因
Samsung M4 70T2864QZ3-CE6 1GB

报告一个错误

Kingston KVR800D2S6/4G 4GB

需要考虑的原因
Kingston KVR800D2S6/4G 4GB

报告一个错误

低于PassMark测试中的延时，ns

50 65

左右 -30% 更低的延时
更快的读取速度，GB/s

4 3

测试中的平均数值
更快的写入速度，GB/s

1,923.1 1,574.4

测试中的平均数值
更高的内存带宽，mbps

6400 5300

左右 1.21 更高的带宽

规格

完整的技术规格清单

Samsung M4 70T2864QZ3-CE6 1GB

Kingston KVR800D2S6/4G 4GB

主要特点

存储器类型

DDR2 DDR2
PassMark中的延时，ns

65 50
读取速度，GB/s

3,858.9 4,433.3
写入速度，GB/s

1,574.4 1,923.1
内存带宽，mbps

5300 6400

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6
时序/时钟速度

5-5-5-15 / 667 MHz 5-5-5-15 / 800 MHz
排名PassMark (越多越好)

607 761

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB

ACPI Digital Co. Ltd. CMA6-4FA01AAR01A00 4GB

Kingston 99U5403-036.A00G 4GB

Kingston 99U5403-036.A00G 4GB

Kingston 9905678-065.A00G 8GB

Kingston 9905678-065.A00G 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Transcend Information JM3200HLE-32G 32GB

Transcend Information JM3200HLE-32G 32GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Golden Empire CL14-16-16 D4-3000 4GB

Golden Empire CL14-16-16 D4-3000 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB

Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB

Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB

Corsair CMSX4GX3M1A1600C9 4GB

Corsair CMSX4GX3M1A1600C9 4GB

Crucial Technology CT16G4SFD8266 16GB

Crucial Technology CT16G4SFD8266 16GB

Kingmax Semiconductor FLFE85F-C8WL9 2GB

Kingmax Semiconductor FLFE85F-C8WL9 2GB

Samsung M471B5673EH1-CF8 2GB

Samsung M471B5673EH1-CF8 2GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Samsung M393A2K43BB1-CRC 16GB

Samsung M393A2K43BB1-CRC 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Transcend Information TS512MLH64V1H 4GB

Transcend Information TS512MLH64V1H 4GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Corsair CMD16GX4M4B3333C16 4GB

Corsair CMD16GX4M4B3333C16 4GB

A-DATA Technology AD73I1B1672EG 2GB

A-DATA Technology AD73I1B1672EG 2GB

Kingston KF3200C18D4/8G 8GB

Kingston KF3200C18D4/8G 8GB

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Corsair CMK16GX4M2B3200C16 8GB

Corsair CMK16GX4M2B3200C16 8GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

Crucial Technology CT16G4SFD8266.C16FN 16GB

Crucial Technology CT16G4SFD8266.C16FN 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-3200C16-4GTZ 4GB

G Skill Intl F4-3200C16-4GTZ 4GB