Peak Electronics 256X64M-67E 2GB vs Samsung M471A1K43EB1-CWE 8GB

总分

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

总分

Samsung M471A1K43EB1-CWE 8GB

Samsung M471A1K43EB1-CWE 8GB

差异规格评论

差异

Peak Electronics 256X64M-67E 2GB

需要考虑的原因
Peak Electronics 256X64M-67E 2GB

报告一个错误

低于PassMark测试中的延时，ns

39 46

左右 15% 更低的延时
更快的读取速度，GB/s

5 16

测试中的平均数值

Samsung M471A1K43EB1-CWE 8GB

需要考虑的原因
Samsung M471A1K43EB1-CWE 8GB

报告一个错误

更快的写入速度，GB/s

12.4 1,597.0

测试中的平均数值
更高的内存带宽，mbps

25600 5300

左右 4.83 更高的带宽

规格

完整的技术规格清单

Peak Electronics 256X64M-67E 2GB

Samsung M471A1K43EB1-CWE 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

39 46
读取速度，GB/s

5,022.9 16.0
写入速度，GB/s

1,597.0 12.4
内存带宽，mbps

5300 25600

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
时序/时钟速度

5-5-5-15 / 667 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

753 2660

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Samsung M471A1K43EB1-CWE 8GB

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UMAX Technology D4-3200-16G-1024X8-L 16GB

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Kingston HP698651-154-MCN 8GB

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Kingston HP32D4U2S8ME-16 16GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Crucial Technology CT16G4SFD832A.M16FRS 16GB

Crucial Technology CT16G4SFD832A.M16FRS 16GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

G Skill Intl F4-3000C15-8GVRB 8GB

G Skill Intl F4-3000C15-8GVRB 8GB

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G Skill Intl F5-6400J3239G16G 16GB

Kingston 9905630-007.A00G 8GB

Kingston 9905630-007.A00G 8GB