Peak Electronics 256X64M-67E 2GB vs Samsung M474A2K43BB1-CPB 16GB

总分

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

总分

Samsung M474A2K43BB1-CPB 16GB

Samsung M474A2K43BB1-CPB 16GB

差异规格评论

差异

Peak Electronics 256X64M-67E 2GB

需要考虑的原因
Peak Electronics 256X64M-67E 2GB

报告一个错误

更快的读取速度，GB/s

5 14.3

测试中的平均数值

Samsung M474A2K43BB1-CPB 16GB

需要考虑的原因
Samsung M474A2K43BB1-CPB 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 39

左右 -39% 更低的延时
更快的写入速度，GB/s

8.6 1,597.0

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Peak Electronics 256X64M-67E 2GB

Samsung M474A2K43BB1-CPB 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

39 28
读取速度，GB/s

5,022.9 14.3
写入速度，GB/s

1,597.0 8.6
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

753 2361

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Peak Electronics 256X64M-67E 2GB

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Kingston ACR256X64D3S1333C9 2GB

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G Skill Intl F4-3200C16-16GVKA 16GB

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Samsung M393B1K70CH0-CH9 8GB

Samsung M393B1K70CH0-CH9 8GB

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G Skill Intl F4-3000C16-8GTZR 8GB