RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Menu
RAMs
RAM
DDR5
DDR4
DDR3
DDR2
关于本网站
Русский
English
Español
Português
Deutsch
Français
Italiano
Polski
中文
日本語
Peak Electronics 256X64M-67E 2GB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
比较
Peak Electronics 256X64M-67E 2GB vs Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
总分
Peak Electronics 256X64M-67E 2GB
总分
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
差异
规格
评论
差异
需要考虑的原因
Peak Electronics 256X64M-67E 2GB
报告一个错误
低于PassMark测试中的延时,ns
39
71
左右 45% 更低的延时
更快的读取速度,GB/s
5
14.5
测试中的平均数值
需要考虑的原因
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
报告一个错误
更快的写入速度,GB/s
8.0
1,597.0
测试中的平均数值
更高的内存带宽,mbps
21300
5300
左右 4.02 更高的带宽
规格
完整的技术规格清单
Peak Electronics 256X64M-67E 2GB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
39
71
读取速度,GB/s
5,022.9
14.5
写入速度,GB/s
1,597.0
8.0
内存带宽,mbps
5300
21300
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 667 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
753
1863
Peak Electronics 256X64M-67E 2GB RAM的比较
A Force Manufacturing Ltd. 256X64M-67E 2GB
Kingston ACR26D4U9S8MH-8 8GB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 99U5474-038.A00LF 4GB
G Skill Intl F4-2400C16-16GFX 16GB
Nanya Technology M2Y51264TU88B0B-3C 512MB
Crucial Technology BLS8G4D240FSBK.8FD 8GB
Peak Electronics 256X64M-67E 2GB
Shenzhen Xingmem Technology Corp CM4X8GF2666C1XMP 8GB
Kingston 9965525-018.A00LF 4GB
G Skill Intl F4-3600C18-8GTZRX 8GB
Samsung M378B5173BH0-CH9 4GB
Kingston 9905678-014.A00G 4GB
SK Hynix HMT41GU7BFR8A-PB 8GB
Kingston 9905700-046.A00G 16GB
Crucial Technology BLE4G3D1608DE1TX0. 4GB
Micron Technology 16ATF2G64HZ-2G6H1 16GB
Kingston 99U5584-007.A00LF 4GB
Maxsun MSD416G26Q3 16GB
AMD R5316G1609U2K 8GB
G Skill Intl F4-3200C16-4GRKD 4GB
Samsung M3 78T2863EHS-CF7 1GB
Samsung V-GeN D4S8GL32A8TL 8GB
Samsung M378B5273DH0-CH9 4GB
Corsair CM4X16GC3000C15K4 16GB
A-DATA Technology DDR4 2400 16GB
Hoodisk Electronics Co Ltd GKE800UD102408-2400 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT4G4DFS824A.C8FADP 4GB
Crucial Technology CT25664AA800.M16FM 2GB
G Skill Intl F4-3000C16-8GISB 8GB
报告一个错误
×
Bug description
Source link