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PNY Electronics 4GBH2X02E99927-16 4GB
AMD R7416G2133U2S 16GB

PNY Electronics 4GBH2X02E99927-16 4GB vs AMD R7416G2133U2S 16GB

总分
star star star star star
PNY Electronics 4GBH2X02E99927-16 4GB

PNY Electronics 4GBH2X02E99927-16 4GB

总分
star star star star star
AMD R7416G2133U2S 16GB

AMD R7416G2133U2S 16GB

差异 规格 评论

差异

PNY Electronics 4GBH2X02E99927-16 4GB 需要考虑的原因
PNY Electronics 4GBH2X02E99927-16 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    63 left arrow 78
    左右 19% 更低的延时
AMD R7416G2133U2S 16GB 需要考虑的原因
AMD R7416G2133U2S 16GB
报告一个错误
  • 更快的读取速度，GB/s
    13.5 left arrow 6.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    6.7 left arrow 5.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
PNY Electronics 4GBH2X02E99927-16 4GB
AMD R7416G2133U2S 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    63 left arrow 78
  • 读取速度，GB/s
    6.1 left arrow 13.5
  • 写入速度，GB/s
    5.0 left arrow 6.7
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1274 left arrow 1594

PNY Electronics 4GBH2X02E99927-16 4GB RAM的比较

Kingston KTP9W1-MIE 16GB

AMD R7416G2133U2S 16GB RAM的比较

TwinMOS 8DPT5MK8-TATP 2GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Kingston ACR16D3LS1NGG/4G 4GB
Kingston ACR16D3LS1NGG/4G 4GB
G Skill Intl F4-3600C14-8GVKA 8GB
G Skill Intl F4-3600C14-8GVKA 8GB
内存RAM
PNY Electronics 4GBH2X02E99927-16 4GB
PNY Electronics 4GBH2X02E99927-16 4GB
AMD R7416G2133U2S 16GB
AMD R7416G2133U2S 16GB
内存RAM
Crucial Technology CT51264BD1339.M16F 4GB
Crucial Technology CT51264BD1339.M16F 4GB
Kingston 9905678-041.A00G 4GB
Kingston 9905678-041.A00G 4GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston 9905622-057.A00G 4GB
Kingston 9905622-057.A00G 4GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393A2K43BB1-CRCA1 16GB
Samsung M393A2K43BB1-CRCA1 16GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Wilk Elektronik S.A. GY2400D464L15/8G 8GB
Wilk Elektronik S.A. GY2400D464L15/8G 8GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Eudar Technology Inc. 8GXMP3000CL16 8GB
Eudar Technology Inc. 8GXMP3000CL16 8GB
内存RAM
Kingston 9905403-011.A03LF 2GB
Kingston 9905403-011.A03LF 2GB
Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB
Hoodisk Electronics Co Ltd NMUD480E8x-2666 8GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Corsair CMD64GX4M8B3200C16 8GB
Corsair CMD64GX4M8B3200C16 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Corsair CMK16GX4M2B3733C17 8GB
Corsair CMK16GX4M2B3733C17 8GB
内存RAM
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
STEC (Silicon Tech) S1024R3NN2QK-I 1GB
G Skill Intl F4-4800C19-8GTZRC 8GB
G Skill Intl F4-4800C19-8GTZRC 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMT32GX4M4C3000C15 8GB
Corsair CMT32GX4M4C3000C15 8GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Chun Well Technology Holding Limited MD4U0836165BCW 8GB
Chun Well Technology Holding Limited MD4U0836165BCW 8GB
内存RAM
Samsung M471A1G44BB0-CWE 8GB
Samsung M471A1G44BB0-CWE 8GB
Corsair CMSX32GX4M2A3200C22 16GB
Corsair CMSX32GX4M2A3200C22 16GB
内存RAM