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PNY Electronics 4GBH2X02E99927-16 4GB
Corsair CMK32GX4M4K3600C16 8GB

PNY Electronics 4GBH2X02E99927-16 4GB vs Corsair CMK32GX4M4K3600C16 8GB

总分
star star star star star
PNY Electronics 4GBH2X02E99927-16 4GB

PNY Electronics 4GBH2X02E99927-16 4GB

总分
star star star star star
Corsair CMK32GX4M4K3600C16 8GB

Corsair CMK32GX4M4K3600C16 8GB

差异 规格 评论

差异

PNY Electronics 4GBH2X02E99927-16 4GB 需要考虑的原因
PNY Electronics 4GBH2X02E99927-16 4GB
报告一个错误
Corsair CMK32GX4M4K3600C16 8GB 需要考虑的原因
Corsair CMK32GX4M4K3600C16 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    31 left arrow 63
    左右 -103% 更低的延时
  • 更快的读取速度，GB/s
    18.8 left arrow 6.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.6 left arrow 5.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
PNY Electronics 4GBH2X02E99927-16 4GB
Corsair CMK32GX4M4K3600C16 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    63 left arrow 31
  • 读取速度，GB/s
    6.1 left arrow 18.8
  • 写入速度，GB/s
    5.0 left arrow 14.6
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1274 left arrow 3190

PNY Electronics 4GBH2X02E99927-16 4GB RAM的比较

AMD R7416G2133U2S 16GB
Kingston KTP9W1-MIE 16GB

Corsair CMK32GX4M4K3600C16 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905471-002.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

PNY Electronics 4GBH2X02E99927-16 4GB
PNY Electronics 4GBH2X02E99927-16 4GB
Corsair CMK32GX4M4K3600C16 8GB
Corsair CMK32GX4M4K3600C16 8GB
内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
Kllisre M471A1K43CB1-CTD 8GB
Kllisre M471A1K43CB1-CTD 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
A-DATA Technology AM2P24HC8T1-BUSS 8GB
A-DATA Technology AM2P24HC8T1-BUSS 8GB
内存RAM
Kingston 9905403-156.A00LF 2GB
Kingston 9905403-156.A00LF 2GB
Corsair CMK64GX4M2E3200C16 32GB
Corsair CMK64GX4M2E3200C16 32GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Kingston 9965669-017.A00G 16GB
Kingston 9965669-017.A00G 16GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
A-DATA Technology AM2P24HC8T1-BBFS 8GB
A-DATA Technology AM2P24HC8T1-BBFS 8GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GU6CJR8N
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Kingmax Semiconductor GLNG43F-18---------- 8GB
Kingmax Semiconductor GLNG43F-18---------- 8GB
内存RAM
Samsung M391B5673FH0-CH9 2GB
Samsung M391B5673FH0-CH9 2GB
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
Crucial Technology CT8G4DFS8213.C8FAD1 8GB
内存RAM
takeMS International AG TMS2GB264D082-805G 2GB
takeMS International AG TMS2GB264D082-805G 2GB
Kingston ACR32D4U2S8HD-8X 8GB
Kingston ACR32D4U2S8HD-8X 8GB
内存RAM
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Nanya Technology M2F4GH64CB8HB6N-CG 4GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
Micron Technology 36ASF2G72PZ-2G3A3 16GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
Corsair CMD16GX4M2C3333C16 8GB
Corsair CMD16GX4M2C3333C16 8GB
内存RAM
Kingston KHX1600C9D3/8G 8GB
Kingston KHX1600C9D3/8G 8GB
Crucial Technology CT4G4DFS824A.C8FADP 4GB
Crucial Technology CT4G4DFS824A.C8FADP 4GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Corsair CM4X8GE2400C16K4 8GB
Corsair CM4X8GE2400C16K4 8GB
内存RAM