PNY Electronics 4GBH2X02E99927-16 4GB vs Kingston 9965589-031.D01G 2GB

总分

PNY Electronics 4GBH2X02E99927-16 4GB

PNY Electronics 4GBH2X02E99927-16 4GB

总分

Kingston 9965589-031.D01G 2GB

Kingston 9965589-031.D01G 2GB

差异规格评论

差异

PNY Electronics 4GBH2X02E99927-16 4GB

需要考虑的原因
PNY Electronics 4GBH2X02E99927-16 4GB

报告一个错误

Kingston 9965589-031.D01G 2GB

需要考虑的原因
Kingston 9965589-031.D01G 2GB

报告一个错误

低于PassMark测试中的延时，ns

47 63

左右 -34% 更低的延时
更快的读取速度，GB/s

10.9 6.1

测试中的平均数值
更快的写入速度，GB/s

7.5 5.0

测试中的平均数值
更高的内存带宽，mbps

19200 10600

左右 1.81 更高的带宽

规格

完整的技术规格清单

PNY Electronics 4GBH2X02E99927-16 4GB

Kingston 9965589-031.D01G 2GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

63 47
读取速度，GB/s

6.1 10.9
写入速度，GB/s

5.0 7.5
内存带宽，mbps

10600 19200

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

7-7-7-20 / 1333 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1274 2211

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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PNY Electronics 4GBH2X02E99927-16 4GB

PNY Electronics 4GBH2X02E99927-16 4GB

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G Skill Intl F4-2666C16-8GRB 8GB

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Samsung M378B1G73EB0-YK0 8GB

G Skill Intl F3-14900CL8-4GBXM 4GB

G Skill Intl F3-14900CL8-4GBXM 4GB

EVGA 16G-D4-2800-MR 4GB

EVGA 16G-D4-2800-MR 4GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

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Kingston XVTW4H-MIE 32GB

Kingston XVTW4H-MIE 32GB