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PNY Electronics 4GBH2X02E99927-16 4GB
Wilk Elektronik S.A. IR2133D464L15S/4G 4GB

PNY Electronics 4GBH2X02E99927-16 4GB vs Wilk Elektronik S.A. IR2133D464L15S/4G 4GB

总分
star star star star star
PNY Electronics 4GBH2X02E99927-16 4GB

PNY Electronics 4GBH2X02E99927-16 4GB

总分
star star star star star
Wilk Elektronik S.A. IR2133D464L15S/4G 4GB

Wilk Elektronik S.A. IR2133D464L15S/4G 4GB

差异 规格 评论

差异

PNY Electronics 4GBH2X02E99927-16 4GB 需要考虑的原因
PNY Electronics 4GBH2X02E99927-16 4GB
报告一个错误
Wilk Elektronik S.A. IR2133D464L15S/4G 4GB 需要考虑的原因
Wilk Elektronik S.A. IR2133D464L15S/4G 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    30 left arrow 63
    左右 -110% 更低的延时
  • 更快的读取速度，GB/s
    15.6 left arrow 6.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    11.8 left arrow 5.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
PNY Electronics 4GBH2X02E99927-16 4GB
Wilk Elektronik S.A. IR2133D464L15S/4G 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    63 left arrow 30
  • 读取速度，GB/s
    6.1 left arrow 15.6
  • 写入速度，GB/s
    5.0 left arrow 11.8
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 6 7 8 9 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1274 left arrow 2341

PNY Electronics 4GBH2X02E99927-16 4GB RAM的比较

AMD R7416G2133U2S 16GB
Kingston KTP9W1-MIE 16GB

Wilk Elektronik S.A. IR2133D464L15S/4G 4GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Samsung M378B5673EH1-CF8 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

PNY Electronics 4GBH2X02E99927-16 4GB
PNY Electronics 4GBH2X02E99927-16 4GB
Wilk Elektronik S.A. IR2133D464L15S/4G 4GB
Wilk Elektronik S.A. IR2133D464L15S/4G 4GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Samsung M393A2G40EB1-CRC 16GB
Samsung M393A2G40EB1-CRC 16GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Crucial Technology CT16G4DFD8266.C16FP 16GB
Crucial Technology CT16G4DFD8266.C16FP 16GB
内存RAM
SK Hynix HMA82GS6CJR8N-VK 16GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Corsair CMSX32GX4M2A2666C18 16GB
Corsair CMSX32GX4M2A2666C18 16GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Wilk Elektronik S.A. IR2400D464L15S/4G 4GB
Wilk Elektronik S.A. IR2400D464L15S/4G 4GB
内存RAM
Smart Modular SG564568FG8N6KF-Z2 2GB
Smart Modular SG564568FG8N6KF-Z2 2GB
Kingston KHX2133C13S4/16G 16GB
Kingston KHX2133C13S4/16G 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Micron Technology 8ATF2G64HZ-3G2B2 16GB
Micron Technology 8ATF2G64HZ-3G2B2 16GB
内存RAM
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMT325S6BFR8C-H9 2GB
SK Hynix HMA41GU7AFR8N-TF 8GB
SK Hynix HMA41GU7AFR8N-TF 8GB
内存RAM
Kingston 99P5471-002.A00LF 2GB
Kingston 99P5471-002.A00LF 2GB
Micron Technology 4ATF51264AZ-2G3B1 4GB
Micron Technology 4ATF51264AZ-2G3B1 4GB
内存RAM
Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
G Skill Intl F4-3200C16-16GTZRX 16GB
G Skill Intl F4-3200C16-16GTZRX 16GB
内存RAM
SK Hynix HYMP512S64CP8-Y5 1GB
SK Hynix HYMP512S64CP8-Y5 1GB
Kingston 9965589-007.D01G 8GB
Kingston 9965589-007.D01G 8GB
内存RAM
A-DATA Technology AM2L16BC4R1-B0AS 4GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
Crucial Technology BLT16G4D26BFT4.C16FD 16GB
Crucial Technology BLT16G4D26BFT4.C16FD 16GB
内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
Crucial Technology BL8G26C16U4B.8FD 8GB
Crucial Technology BL8G26C16U4B.8FD 8GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
Kingston KF3200C16D4/8GX 8GB
Kingston KF3200C16D4/8GX 8GB
内存RAM