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PNY Electronics 64C0MHHHJ-HS 4GB
Corsair CMK16GX4M2B3200C16 8GB

PNY Electronics 64C0MHHHJ-HS 4GB vs Corsair CMK16GX4M2B3200C16 8GB

总分
star star star star star
PNY Electronics 64C0MHHHJ-HS 4GB

PNY Electronics 64C0MHHHJ-HS 4GB

总分
star star star star star
Corsair CMK16GX4M2B3200C16 8GB

Corsair CMK16GX4M2B3200C16 8GB

差异 规格 评论

差异

PNY Electronics 64C0MHHHJ-HS 4GB 需要考虑的原因
PNY Electronics 64C0MHHHJ-HS 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 28
    左右 7% 更低的延时
Corsair CMK16GX4M2B3200C16 8GB 需要考虑的原因
Corsair CMK16GX4M2B3200C16 8GB
报告一个错误
  • 更快的读取速度，GB/s
    18.3 left arrow 13.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    14.5 left arrow 8.3
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 10600
    左右 1.6 更高的带宽

规格

完整的技术规格清单
PNY Electronics 64C0MHHHJ-HS 4GB
Corsair CMK16GX4M2B3200C16 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 28
  • 读取速度，GB/s
    13.7 left arrow 18.3
  • 写入速度，GB/s
    8.3 left arrow 14.5
  • 内存带宽，mbps
    10600 left arrow 17000
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2270 left arrow 3454

PNY Electronics 64C0MHHHJ-HS 4GB RAM的比较

A-DATA Technology EL63I1C1624ZV 4GB
G Skill Intl F4-3200C16-8GTRS 8GB

Corsair CMK16GX4M2B3200C16 8GB RAM的比较

Corsair CMK16GX4M2F4400C19 8GB
Corsair CMK16GX4M2K4000C19 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Crucial Technology BLE4G4D26AFEA.8FBD 4GB
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内存RAM
PNY Electronics 64C0MHHHJ-HS 4GB
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Corsair CMK16GX4M2B3200C16 8GB
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ISD Technology Limited KD48GU880-32A160X 8GB
内存RAM
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内存RAM
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Corsair CMK32GX4M4K4000C19 8GB
内存RAM
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Samsung M393A2G40DBD-CP1???? 16GB
内存RAM
Kingston 99U5471-012.A00LF 4GB
Kingston 99U5471-012.A00LF 4GB
Corsair CMK16GX4M4B3200C16 4GB
Corsair CMK16GX4M4B3200C16 4GB
内存RAM