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PNY Electronics 64C0MHHHJ-HS 4GB
A-DATA Technology EL63I1C1624ZV 4GB

PNY Electronics 64C0MHHHJ-HS 4GB vs A-DATA Technology EL63I1C1624ZV 4GB

总分
star star star star star
PNY Electronics 64C0MHHHJ-HS 4GB

PNY Electronics 64C0MHHHJ-HS 4GB

总分
star star star star star
A-DATA Technology EL63I1C1624ZV 4GB

A-DATA Technology EL63I1C1624ZV 4GB

差异 规格 评论

差异

PNY Electronics 64C0MHHHJ-HS 4GB 需要考虑的原因
PNY Electronics 64C0MHHHJ-HS 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 28
    左右 7% 更低的延时
  • 更快的读取速度，GB/s
    13.7 left arrow 12.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.3 left arrow 7.3
    测试中的平均数值
A-DATA Technology EL63I1C1624ZV 4GB 需要考虑的原因
A-DATA Technology EL63I1C1624ZV 4GB
报告一个错误

规格

完整的技术规格清单
PNY Electronics 64C0MHHHJ-HS 4GB
A-DATA Technology EL63I1C1624ZV 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时，ns
    26 left arrow 28
  • 读取速度，GB/s
    13.7 left arrow 12.2
  • 写入速度，GB/s
    8.3 left arrow 7.3
  • 内存带宽，mbps
    10600 left arrow 10600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    2270 left arrow 2070

PNY Electronics 64C0MHHHJ-HS 4GB RAM的比较

G Skill Intl F4-3200C16-8GTRS 8GB

A-DATA Technology EL63I1C1624ZV 4GB RAM的比较

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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