Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
A-DATA Technology EL63I1C1624ZV 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB vs A-DATA Technology EL63I1C1624ZV 4GB

总分
star star star star star
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB

总分
star star star star star
A-DATA Technology EL63I1C1624ZV 4GB

A-DATA Technology EL63I1C1624ZV 4GB

差异

  • 低于PassMark测试中的延时,ns
    28 left arrow 30
    左右 -7% 更低的延时
  • 更快的读取速度,GB/s
    12.2 left arrow 8.8
    测试中的平均数值
  • 更快的写入速度,GB/s
    7.3 left arrow 5.6
    测试中的平均数值

规格

完整的技术规格清单
Hynix Semiconductor (Hyundai Electronics) HMT351S6CFR8C-H9 4GB
A-DATA Technology EL63I1C1624ZV 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR3
  • PassMark中的延时,ns
    30 left arrow 28
  • 读取速度,GB/s
    8.8 left arrow 12.2
  • 写入速度,GB/s
    5.6 left arrow 7.3
  • 内存带宽,mbps
    10600 left arrow 10600
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • 排名PassMark (越多越好)
    1344 left arrow 2070
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较