PNY Electronics 64C0MHHHJ-HS 4GB
A-DATA Technology EL63I1C1624ZV 4GB

PNY Electronics 64C0MHHHJ-HS 4GB vs A-DATA Technology EL63I1C1624ZV 4GB

Overall score
star star star star star
PNY Electronics 64C0MHHHJ-HS 4GB

PNY Electronics 64C0MHHHJ-HS 4GB

Overall score
star star star star star
A-DATA Technology EL63I1C1624ZV 4GB

A-DATA Technology EL63I1C1624ZV 4GB

Differences

  • Below the latency in the PassMark tests, ns
    26 left arrow 28
    Around 7% lower latency
  • Faster reading speed, GB/s
    13.7 left arrow 12.2
    Average value in the tests
  • Faster write speed, GB/s
    8.3 left arrow 7.3
    Average value in the tests

Specifications

Complete list of technical specifications
PNY Electronics 64C0MHHHJ-HS 4GB
A-DATA Technology EL63I1C1624ZV 4GB
Main characteristics
  • Memory type
    DDR3 left arrow DDR3
  • Latency in PassMark, ns
    26 left arrow 28
  • Read speed, GB/s
    13.7 left arrow 12.2
  • Write speed, GB/s
    8.3 left arrow 7.3
  • Memory bandwidth, mbps
    10600 left arrow 10600
Other
  • Description
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9
  • Timings / Clock speed
    7-7-7-20 / 1333 MHz left arrow 7-7-7-20 / 1333 MHz
  • Ranking PassMark (The more the better)
    2270 left arrow 2070
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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