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PNY Electronics 64C0MHHHJ-HS 4GB
Crucial Technology CB16GS2400.C16J 16GB

PNY Electronics 64C0MHHHJ-HS 4GB vs Crucial Technology CB16GS2400.C16J 16GB

总分
star star star star star
PNY Electronics 64C0MHHHJ-HS 4GB

PNY Electronics 64C0MHHHJ-HS 4GB

总分
star star star star star
Crucial Technology CB16GS2400.C16J 16GB

Crucial Technology CB16GS2400.C16J 16GB

差异 规格 评论

差异

PNY Electronics 64C0MHHHJ-HS 4GB 需要考虑的原因
PNY Electronics 64C0MHHHJ-HS 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    26 left arrow 66
    左右 61% 更低的延时
  • 更快的读取速度，GB/s
    13.7 left arrow 12
    测试中的平均数值
  • 更快的写入速度，GB/s
    8.3 left arrow 7.4
    测试中的平均数值
Crucial Technology CB16GS2400.C16J 16GB 需要考虑的原因
Crucial Technology CB16GS2400.C16J 16GB
报告一个错误
  • 更高的内存带宽，mbps
    19200 left arrow 10600
    左右 1.81 更高的带宽

规格

完整的技术规格清单
PNY Electronics 64C0MHHHJ-HS 4GB
Crucial Technology CB16GS2400.C16J 16GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    26 left arrow 66
  • 读取速度，GB/s
    13.7 left arrow 12.0
  • 写入速度，GB/s
    8.3 left arrow 7.4
  • 内存带宽，mbps
    10600 left arrow 19200
Other
  • 描述
    PC3-10600, 1.5V, CAS Supported: 5 6 7 8 9 10 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    7-7-7-20 / 1333 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    2270 left arrow 1909

PNY Electronics 64C0MHHHJ-HS 4GB RAM的比较

A-DATA Technology EL63I1C1624ZV 4GB
G Skill Intl F4-3200C16-8GTRS 8GB

Crucial Technology CB16GS2400.C16J 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
AMD R5316G1609U2K 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

PNY Electronics 64C0MHHHJ-HS 4GB
PNY Electronics 64C0MHHHJ-HS 4GB
Crucial Technology CB16GS2400.C16J 16GB
Crucial Technology CB16GS2400.C16J 16GB
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Samsung M395T2863QZ4-CF76 1GB
Samsung M395T2863QZ4-CF76 1GB
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Boya Microelectronics Inc. AM52SE24G64AP-SQ 32GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
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Kingston 9905665-011.A00G 4GB
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Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16ATF2G64AZ-2G6D1 16GB
Micron Technology 16ATF2G64AZ-2G6D1 16GB
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SpecTek Incorporated ?????????????????? 2GB
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Kingston 99U5474-028.A00LF 4GB
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Elpida EBJ10UE8BAFA-AE-E 1GB
Elpida EBJ10UE8BAFA-AE-E 1GB
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Crucial Technology BLS8G4D240FSBK.8FD 8GB
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Samsung M393B1K70CH0-CH9 8GB
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Corsair CMK128GX4M8X3600C18 16GB
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SK Hynix HMT151R7TFR4C-H9 4GB
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Samsung 1600 CL10 Series 8GB
Micron Technology 18ASF1G72PZ-2G1A2 8GB
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内存RAM
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Qimonda 64T128020EDL2.5C2 1GB
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Kingston K821PJ-MID 16GB
内存RAM
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Samsung M386B4G70DM0-CMA4 32GB
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Kingston 99U5663-001.A00G 16GB
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