PUSKILL DDR3 1600 8G 8GB vs Crucial Technology BLM16G44C19U4BL.M8FB 16GB

总分

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

总分

Crucial Technology BLM16G44C19U4BL.M8FB 16GB

Crucial Technology BLM16G44C19U4BL.M8FB 16GB

差异规格评论

差异

PUSKILL DDR3 1600 8G 8GB

需要考虑的原因
PUSKILL DDR3 1600 8G 8GB

报告一个错误

Crucial Technology BLM16G44C19U4BL.M8FB 16GB

需要考虑的原因
Crucial Technology BLM16G44C19U4BL.M8FB 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 38

左右 -52% 更低的延时
更快的读取速度，GB/s

18.3 16.7

测试中的平均数值
更快的写入速度，GB/s

16.7 10.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

PUSKILL DDR3 1600 8G 8GB

Crucial Technology BLM16G44C19U4BL.M8FB 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 25
读取速度，GB/s

16.7 18.3
写入速度，GB/s

10.0 16.7
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 12 13 14 15 16 17 18 19 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2753 3911

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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Absolute Latency

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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Samsung M393B1K70QB0-CMA 8GB

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Kingston 9905599-020.A00G 8GB

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

Micron Technology 8ATF1G64HZ-2G6H1 8GB

Micron Technology 8ATF1G64HZ-2G6H1 8GB

Samsung DDR3 8GB 1600MHz 8GB

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Mushkin 99[2/7/4]202F 4GB

Mushkin 99[2/7/4]202F 4GB