PUSKILL DDR3 1600 8G 8GB vs Crucial Technology BLS8G4D26BFSC.16FBR2 8GB

总分

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

总分

Crucial Technology BLS8G4D26BFSC.16FBR2 8GB

Crucial Technology BLS8G4D26BFSC.16FBR2 8GB

差异规格评论

差异

PUSKILL DDR3 1600 8G 8GB

需要考虑的原因
PUSKILL DDR3 1600 8G 8GB

报告一个错误

更快的读取速度，GB/s

16.7 15.6

测试中的平均数值

Crucial Technology BLS8G4D26BFSC.16FBR2 8GB

需要考虑的原因
Crucial Technology BLS8G4D26BFSC.16FBR2 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 38

左右 -41% 更低的延时
更快的写入速度，GB/s

13.9 10.0

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

PUSKILL DDR3 1600 8G 8GB

Crucial Technology BLS8G4D26BFSC.16FBR2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

38 27
读取速度，GB/s

16.7 15.6
写入速度，GB/s

10.0 13.9
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, 1.35V , CAS Supported: 5 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2753 2964

RAM Latency Calculator

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Micron Technology 8ATF1G64HZ-2G3E1 8GB

A-DATA Technology AD5U48008G-B 8GB

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Crucial Technology BL8G30C15U4W.8FE 8GB

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SK Hynix HMT351S6BFR8C-H9 4GB

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Samsung M3 78T2863EHS-CF7 1GB

G Skill Intl F4-3200C15-16GTZSK 16GB

G Skill Intl F4-3200C15-16GTZSK 16GB